IXGA48N60C3 IXYS, IXGA48N60C3 Datasheet - Page 3

• Manufacturer Part Number: IXGA48N60C3
• Description: IGBT 250A 600V TO-263AA
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGA48N60C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 48
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 38
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.57
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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5.0
4.5
4.0
3.5
3.0
2.5
2.0
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0
7
0
0.4
8
0.4
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
vs. Gate-to-Emitter Voltage
0.8
9
0.8
I
C
1.2
= 60A
10
V
V
V
30A
15A
CE
CE
GE
1.2
@ 125ºC
@ 25ºC
- Volts
- Volts
- Volts
1.6
11
V
1.6
GE
V
GE
12
= 15V
2
13V
11V
= 15V
13V
11V
2
2.4
13
T
J
= 25ºC
7V
9V
2.4
2.8
14
9V
7V
2.8
3.2
15
300
270
240
210
180
150
120
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
90
60
30
90
80
70
60
50
40
30
20
10
0
0
5.0
25
0
5.5
V
Fig. 2. Extended Output Characteristics
2
GE
IXGA48N60C3 IXGH48N60C3
= 15V
Fig. 4. Dependence of V
6.0
50
4
Fig. 6. Input Admittance
Junction Temperature
6.5
11V
13V
6
9V
7V
T
J
T
- Degrees Centigrade
J
7.0
V
V
75
8
= -125ºC
GE
CE
@ 25ºC
- 40ºC
25ºC
- Volts
- Volts
I
I
7.5
10
C
I
C
C
= 15A
= 30A
= 60A
100
8.0
12
IXGP48N60C3
CE(sat)
8.5
14
V
GE
9.0
125
16
on
= 15V
9.5
18
10.0
150
20