HGTG30N60A4D Fairchild Semiconductor, HGTG30N60A4D Datasheet
HGTG30N60A4D
Specifications of HGTG30N60A4D
HGTG30N60A4D_NL
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HGTG30N60A4D Summary of contents
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... Data Sheet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... MIN TYP 600 - 125 1 125 C - 1.6 J 4.5 5 15V, 150 - 15V - 225 20V - 300 150 - 38 - 280 - 600 - 240 o = 125 180 - 58 - 280 - 1000 - 450 - 2 UNITS MAX UNITS - V 250 A 2.8 mA 2.6 V 2.0 V 7.0 V 250 270 nC 360 350 200 1200 J 750 J 2 HGTG30N60A4D Rev. B1 ...
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... V , COLLECTOR TO EMITTER VOLTAGE ( 390V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME MAX UNITS o 0.27 C/W o 0.65 C/W ON2 500 600 700 900 800 700 600 500 400 300 200 14 15 HGTG30N60A4D Rev. B1 ...
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... COLLECTOR TO EMITTER VOLTAGE (V) CE 1400 200 390V G CE 1200 1000 800 125 12V OR 15V J GE 600 400 200 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 100 200 390V 125 15V 12V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 2.0 2.5 = 12V OR 15V 12V 15V HGTG30N60A4D Rev. B1 ...
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... OR 15V COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA G(REF 600V 400V CE 7 200V CE 5.0 2 100 150 Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 125 200 390V TOTAL ON2 OFF 60A 30A GATE RESISTANCE ( ) 200 250 = 15V I = 15A CE 100 300 HGTG30N60A4D Rev. B1 ...
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... EC 90 125 125 125 FORWARD CURRENT (A) EC 1400 V = 390V CE 125 1200 1000 125 800 600 25 400 200 0 200 300 400 500 600 700 dI /dt, RATE OF CHANGE OF CURRENT ( CURRENT = 15V 60A 30A 15A 30A 15A 30A 15A EC 800 900 1000 HGTG30N60A4D Rev. B1 ...
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... Test Circuit and Waveforms L = 200 FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2004 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued RECTANGULAR PULSE DURATION (s) 1 HGTP30N60A4D DIODE TA49373 DUT + 390V DUTY FACTOR PEAK 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FIGURE 25. SWITCHING TEST WAVEFORMS HGTG30N60A4D Rev ...
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... A 50% duty factor was used (Figure 3) and D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in the ; i.e., the collector current equals zero OFF HGTG30N60A4D Rev d(OFF)I ). The ON2 - T )/ ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...