IXGH48N60B3C1 IXYS, IXGH48N60B3C1 Datasheet - Page 2

IGBT B3 48A 600V TO-247

IXGH48N60B3C1

Manufacturer Part Number
IXGH48N60B3C1
Description
IGBT B3 48A 600V TO-247
Manufacturer
IXYS
Series
GenX3SC™r
Datasheet

Specifications of IXGH48N60B3C1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 32A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
48
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
116
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.3
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
20
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Symbol Test Conditions
(T
V
R
Notes
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
Reverse Diode (SiC)
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
on
off
on
off
F
ies
oes
res
thJC
thCS
thJC
g
ge
gc
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
I
F
= 20A, V
Inductive Load, T
I
V
Note 2
Inductive Load, T
I
V
Note 2
I
V
I
C
C
C
C
CE
CE
CE
= 30A, V
= 40A, V
= 30A, V
= 30A, V
PRELIMINARY TECHNICAL INFORMATION
= 480V, R
= 480V, R
= 25V, V
GE
= 0V, Note 1
CE
GE
GE
GE
GE
= 10V, Note 1
= 15V, V
= 15V
= 15V
G
G
4,835,592
4,881,106
= 0V, f = 1MHz
= 5Ω
= 5Ω
J
J
= 25°C
= 125°C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
T
J
= 125°C
5,049,961
5,063,307
5,187,117
CES
5,237,481
5,381,025
5,486,715
Min.
Min.
Characteristic Values
28
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
3980
1.65
0.66
0.21
1.80
Typ.
CE
0.45
0.50
1.30
190
115
130
116
190
157
45
21
40
22
26
22
26
(Clamp), T
46
Max.
0.42 °C/W
0.90 °C/W
Max.
2.10
1.20
200
200
6,404,065 B1
6,534,343
6,583,505
J
or R
°C/W
mJ
mJ
mJ
nC
nC
nC
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
G
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-247 (IXGH) Outline
IXGH48N60B3C1
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
6,727,585
6,771,478 B2 7,071,537
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15
4.7
2.2
2.2
1.0
Millimeter
.4
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
BSC
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242
Inches
7,157,338B2
Max.
BSC
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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