IRG4PC40UPBF International Rectifier, IRG4PC40UPBF Datasheet
IRG4PC40UPBF
Manufacturer Part Number
IRG4PC40UPBF
Description
IGBT UFAST 600V 40A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr
Specifications of IRG4PC40UPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
40A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AC
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Capacitance, Gate
2100 pF
Current, Collector
40 A
Energy Rating
15 mJ
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
8 to 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.15 V
Dc Collector Current
40A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Compliant
Other names
*IRG4PC40UPBF
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Thermal Resistance
Features
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
Absolute Maximum Ratings
• UltraFast: Optimized for high operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-247AC package
• Lead-Free
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
C
C
CM
LM
Generation 3
kHz in resonant mode
parameter distribution and higher efficiency than
J
ARV
STG
CES
GE
D
D
industry-standard Generation 3 IR IGBT's
θJC
θCS
θJA
frequencies 8-40 kHz in hard switching, >200
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
G
n-channel
------
------
------
------
Min.
300 (0.063 in. (1.6mm) from case)
IRG4PC40UPbF
E
C
10 lbf•in (1.1N•m)
-55 to +150
TO-247AC
UltraFast Speed IGBT
Max.
6 (0.21)
600
160
160
±20
160
40
20
15
65
Typ.
------
------
0.24
V
@V
CE(on) typ.
V
GE
CES
= 15V, I
Max.
------
------
0.77
40
PD-95184
= 600V
= 1.72V
C
= 20A
Units
g (oz)
Units
°C/W
mJ
W
°C
V
A
V
1
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IRG4PC40UPBF Summary of contents
Page 1
... Storage Temperature Range STG Soldering Temperature, for 10 sec. Mounting torque, 6- screw. Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, flat, greased surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight IRG4PC40UPbF UltraFast Speed IGBT C V CES V CE(on) typ 15V n-channel TO-247AC Max. 600 40 20 ...
Page 2
... IRG4PC40UPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage ---- ∆V /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage ---- GE(th Forward Transconductance Zero Gate Voltage Collector Current ...
Page 3
... IRG4PC40UPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT EMBLY LOT CODE 5657 AS S EMBLE 35, 2000 EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" 8 INT ERNAT IONAL RECT IFIE R IRFPE30 ...