STGW40N120KD STMicroelectronics, STGW40N120KD Datasheet - Page 5

• Manufacturer Part Number: STGW40N120KD
• Description: IGBT 1200V 80A 240W TO247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW40N120KD

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.85V @ 15V, 30A
• Current - Collector (ic) (max): 80A
• Power - Max: 240W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 80A
• Gate To Emitter Voltage (max): ±25V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10000-5

Table 6.
Table 7.
1.
2. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
Symbol
(di/dt)
(di/dt)
Symbol
Eon
Eon
t
t
E
E
t
t
t
t
r
r
in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at
the same temperature (25°C and 125°C)
d
d
d(on)
d(on)
(V
(V
Eon is the turn-on losses when a typical diode is used in the test circuit in
off
off
E
E
I
I
(
(
Q
Q
V
t
t
t
t
rrm
rrm
t
t
off
off
r
r
f
f
ts
ts
off
off
rr
rr
F
rr
rr
(2)
(2)
(1)
(1)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
Doc ID 15360 Rev 3
V
R
(see
V
R
T
V
R
(see
V
R
T
V
R
(see
V
R
T
I
I
I
di/dt = 100 A/µs
(see
I
T
di/dt = 100 A/µs
(see
J
F
F
F
F
CC
CC
G
G
CC
CC
J
CC
CC
J
G
G
G
G
J
= 125 °C (see
= 10 Ω, V
= 10 Ω, V
= 20 A
= 20 A, T
= 20 A, V
= 20 A, V
= 125 °C (see
= 125 °C (see
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 125 °C,
= 960 V, I
= 960 V, I
= 960 V, I
= 960 V, I
= 960 V, I
= 960 V, I
Figure
Figure
Figure
Figure
Figure
Test conditions
Test conditions
Test conditions
2)
2)
2)
J
GE
GE
R
R
GE
GE
GE
GE
5)
5)
= 125 °C
C
C
= 45 V,
= 45 V,
C
C
C
C
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 15 V,
= 30 A
= 30 A
= 30 A
= 30 A
= 30 A
= 30 A
Figure
Figure
Figure
2)
2)
2)
Figure
Min.
Min.
Min.
-
-
-
-
-
-
-
-
-
2. If the IGBT is offered
Typ.
Typ.
Typ.
540
665
338
210
144
420
360
235
152
722
1.9
1.7
5.6
3.7
5.7
9.4
4.7
9.3
48
40
45
38
84
84
14
9
Max.
Max.
Max.
-
-
-
-
-
-
-
-
-
A/µs
A/µs
Unit
Unit
Unit
nC
nC
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
A
A
5/10