STGW35HF60WD STMicroelectronics, STGW35HF60WD Datasheet - Page 4

• Manufacturer Part Number: STGW35HF60WD
• Description: IGBT 600V 60A 200W TO-247
• Manufacturer: STMicroelectronics

Specifications of STGW35HF60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10073-5

Electrical characteristics
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Table 7.
Table 8.
1. Eon is the tun-on losses when a typical diode is used in the test circuit in
Table 9.
Symbol
(di/dt)
(di/dt)
Symbol
Symbol
t
t
E
E
t
t
t
t
r
r
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C). Eon include diode recovery energy.
d
d
d(on)
d(on)
(V
(V
E
E
E
E
on
on
I
I
(
(
Q
Q
V
t
t
t
t
rrm
rrm
t
t
off
off
off
off
r
r
f
f
ts
ts
off
off
rr
rr
(1)
(1)
F
rr
rr
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching on/off (inductive load)
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Parameter
Doc ID 15592 Rev 5
V
R
(see
V
R
T
V
R
(see
V
R
T
V
R
(see
V
R
T
(see
I
I
I
di/dt = 100 A/µs
(see
I
T
(see
F
F
F
F
CC
CC
J
G
G
CC
CC
CC
CC
G
G
J
GE
GE
J
J
= 20 A,
= 125 °C (see
= 20 A
= 20 A,V
= 20 A,V
= 125 °C (see
= 125 °C
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
= 10 Ω, V
=125 °C, di/dt = 100 A/µs
= 400 V, I
= 400 V, I
Figure
= 400 V, I
= 400 V, I
= 400 V, I
= 400 V, I
= 10 Ω, V
= 10 Ω, V
Figure
Figure
Figure
Figure
Figure
Test conditions
Test conditions
Test conditions
T
R
R
18)
16)
16)
16)
J
19)
19)
GE
GE
GE
GE
= 50 V,
= 50 V,
= 125 °C
C
C
GE
C
C
C
GE
C
= 15 V,
= 15 V,
= 20 A
= 20 A
= 15 V,
= 15 V,
= 20 A
= 20 A
= 20 A,
= 20 A,
= 15 V
Figure
=15 V,
Figure
18)
16)
Figure
Min.
Min.
Min.
18. If the IGBT is offered
-
-
-
-
-
-
-
-
-
1650
1600
Typ.
Typ. Max.
STGW35HF60WD
Typ.
175
225
135
375
290
185
475
420
350
770
1.8
1.4
5.5
30
15
30
15
30
40
50
70
50
90
3
Max.
2.25
Max.
530
-
-
-
-
-
-
A/µs
A/µs
Unit
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
V
V
A
A