IRGB30B60KPBF International Rectifier, IRGB30B60KPBF Datasheet

IRGB30B60KPBF

Manufacturer Part Number

IRGB30B60KPBF

Description

IGBT 600V 78A TO220AB

Manufacturer

International Rectifier

Datasheets

1.IRGB30B60KPBF.pdf (14 pages)

2.IRGB30B60KPBF.pdf (13 pages)

Specifications of IRGB30B60KPBF

Igbt Type

NPT

Voltage - Collector Emitter Breakdown (max)

600V

Vce(on) (max) @ Vge, Ic

2.35V @ 15V, 30A

Current - Collector (ic) (max)

78A

Power - Max

370W

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Channel Type

Configuration

Single

Collector-emitter Voltage

600V

Gate To Emitter Voltage (max)

±20V

Package Type

TO-220AB

Pin Count

3 +Tab

Mounting

Through Hole

Operating Temperature (max)

175C

Operating Temperature Classification

Military

Transistor Type

IGBT

Dc Collector Current

78A

Collector Emitter Voltage Vces

2.35V

Power Dissipation Pd

370W

Collector Emitter Voltage V(br)ceo

600V

Operating Temperature Range

-55Â°C To +175Â°C

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRGB30B60KPBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRGB30B60KPBF

Manufacturer:

INFINEON

Quantity:

12 000

Current page: 1 of 14
Download datasheet (381Kb)

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INSULATED GATE BIPOLAR TRANSISTOR

Features

• Low VCE (on) Non Punch Through IGBT Technology

• 10µs Short Circuit Capability

• Square RBSOA

• Positive VCE (on) Temperature Coefficient

• Maximum Junction Temperature rated at 175°C

• Lead-Free

Benefits

• Benchmark Efficiency for Motor Control

• Rugged Transient Performance

• Low EMI

• Excellent Current Sharing in Parallel Operation

Absolute Maximum Ratings

Thermal / Mechanical Characteristics

* R

STG

CES

ISOL

θJC

θCS

θJA

and is accounted for by the physical wearout of the die attach medium.

@ T

θJC

(end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C

= 25°C

= 100°C

= 25°C

= 100°C Maximum Power Dissipation

Collector-to-Emitter Voltage

Continuous Collector Current

Pulse Collector Current (Ref.Fig.C.T.5)

Clamped Inductive Load current

RMS Isolation Voltage, Terminal to Case, t=1 min.

Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

Junction-to-Case- IGBT

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Junction-to-Ambient (PCB Mount, Steady State)

Weight

Parameter

™

IRGB30B60KPbF

TO-220AB

eÃÃ

n-channel

300 (0.063 in. (1.6mm) from case)

Min.

–––

IRGS30B60KPbF

IRGB30B60KPbF

IRGS30B60KPbF

IRGSL30B60KPbF

10 lbf·in (1.1 N·m)

-55 to +175

Pak

Max.

2500

Typ.

0.50

1.44

600

120

±20

370

180

–––

CES

CE(on)

= 50A, T

> 10µs, T

= 600V

at T

IRGSL30B60KPbF

Max.

typ. = 1.95V

0.41*

–––

=175°C

TO-262

=100°C

=150°C

05/17/05

Units

°C/W

°C

Related parts for IRGB30B60KPBF

IRGB30B60KPBF Summary of contents

Page 1

... G n-channel TO-220AB IRGB30B60KPbF Parameter ™ 300 (0.063 in. (1.6mm) from case) Parameter Min. ––– ––– d ––– eÃÃ ––– ––– IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF V = 600V C CES I = 50A, T =100° =175° > 10µs, T =150° ...

Page 2

IRGB/S/SL30B60KPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Threshold Voltage temp. coefficient GE(th) J gfe Forward Transconductance ...

Page 3

T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 1000 100 100 ...

Page 4

IRGB/S/SL30B60KPbF 18V 15V 12V 10V 8. (V) Fig Typ. IGBT Output ...

Page 5

15A 30A 60A (V) Fig Typical V vs -40°C ...

Page 6

IRGB/S/SL30B60KPbF 3000 2500 2000 E OFF 1500 1000 500 Fig Typ. Energy Loss vs 150°C; L=200µ 10Ω 3000 2500 2000 E OFF 1500 1000 500 0 ...

Page 7

V CE (V) Fig. 16- Typ. Capacitance vs 0V 1MHz 0.50 0.20 0.1 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( ...

Page 8

IRGB/S/SL30B60KPbF 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Driver DUT Fig.C.T.3 - S.C.SOA Circuit 8 L VCC + 80 V DUT - diode clamp / 360V DUT Rg Fig.C.T.5 - Resistive Load ...

Page 9

I CE 500 tf 400 300 200 100 0 Eof f Loss -100 -0.20 0.00 0.20 0.40 0.60 Time(µs) Fig. WF1- Typ. Turn-off Loss Waveform @ T = 150°C using Fig. ...

Page 10

IRGB/S/SL30B60KPbF Y6HQG ) UCDTÃDTÃ6IÃDSA Ã GPUÃ8P9 Ã &'( 6TT H7G 9ÃPIÃXXÃ (Ã ((& DIÃUC Ã6TT H7G`ÃGDI ÃÅ8Å Note: "P" in assembly line position indicates "Lead-Free" 10 DIU SI6UDPI6G S 8UDAD S GPBP 6TT H7G` GPUÃ8P9 Q6SUÃIVH7 S 96U Ã8P9 ...

Page 11

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ 5 www.irf.com IRGB/S/SL30B60KPbF DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ 6TT@H7G` `@6SÃÃ2Ã! GPUÃ8P @ X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P @ Q6SUÃIVH7@S 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S 6U@Ã8P ...

Page 12

IRGB/S/SL30B60KPbF TO-262 Package Outline TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ Q6SUÃIVH7@S DIU@SI6UDPI6 S@8UDAD@S PBP 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃ @69AS@@ 6TT@H7 ` PUÃ8P9@ ...

Page 13

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. ...

Page 14

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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