STGP10NB60S STMicroelectronics, STGP10NB60S Datasheet - Page 5

• Manufacturer Part Number: STGP10NB60S
• Description: IGBT N-CHAN 10A 600V TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP10NB60S

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 10A
• Current - Collector (ic) (max): 20A
• Power - Max: 80W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-6733-5; STGP10NB60S

STGB10NB60S, STGP10NB60S, STGP10NB60SFP
Table 6.
Table 7.
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
2. Turn-off losses include also the tail of the collector current.
Symbol
(di/dt)
Symbol
t
t
Eon
E
E
t
t
t
r
r
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same
temperature (25°C and 125°C).
d
d
d(on)
(V
(V
off
off
E
(
(
t
t
t
off
off
r
f
f
off
off
ts
(2)
(2)
(1)
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-off switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
Doc ID 10985 Rev 3
V
R
(see Figure 17)
V
R
(see Figure 17)
V
R
T
(see Figure 17)
V
R
(see Figure 17)
V
R
T
(see Figure 17)
j
j
CC
CC
CC
CC
CC
G
G
G
G
G
= 125 °C
= 125 °C
= 1 kΩ , V
= 1 kΩ , V
= 1 kΩ , V
= 1 kΩ , V
= 1 kΩ , V
= 480 V, I
= 480 V, I
= 480 V, I
= 480 V, I
= 480 V, I
Test conditions
Test conditions
GE
GE
GE
GE
GE
C
C
C
C
C
= 15 V
= 15 V
= 15 V,
= 15 V
= 15 V,
= 10 A
= 10 A
= 10 A
= 10 A
= 10 A
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ. Max.
Typ.
0.46
0.6
5.6
0.7
2.2
1.2
1.2
3.8
1.2
1.9
5
8
8
Max. Unit
-
-
-
-
-
A/µs
Unit
µs
µs
µs
µs
µJ
µJ
µJ
µJ
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