STGP20NC60V STMicroelectronics, STGP20NC60V Datasheet - Page 6

• Manufacturer Part Number: STGP20NC60V
• Description: IGBT N-CHAN 60A 600V TO220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP20NC60V

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 200W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Collector Emitter Voltage V(br)ceo: 600V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-4355-5

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
Gate charge vs gate-source voltage Figure 7.
Electrical characteristics (curves)
Output characteristics
Transconductance
STGB20NC60V - STGP20NC60V - STGW20NC60V
Figure 3.
Figure 5.
Capacitance variations
Transfer characteristics
Collector-emitter on voltage vs
temperature