IRG4IBC20FDPBF International Rectifier, IRG4IBC20FDPBF Datasheet - Page 3

• Manufacturer Part Number: IRG4IBC20FDPBF
• Description: IGBT W/DIODE 600V 14.3A TO220FP
• Manufacturer: International Rectifier

Specifications of IRG4IBC20FDPBF

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 9A
• Current - Collector (ic) (max): 14.3A
• Power - Max: 34W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 14.3A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 34W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: *IRG4IBC20FDPBF

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100
10.0
8.0
6.0
4.0
2.0
0.0
10
Fig. 2 - Typical Output Characteristics
1
0.1
1
Square wave:
V
CE
, Collector-to-Emitter Voltage (V)
T = 25 C
60% of rated
J
Ideal diodes
I
voltage
o
T = 150 C
J
Fig. 1 - Typical Load Current vs. Frequency
V
20µs PULSE WIDTH
GE
= 15V
o
(Load Current = I
1
10
f, Frequency (KHz)
RMS
of fundamental)
100
10
Fig. 3 - Typical Transfer Characteristics
1
5
T = 150 C
J
6
V
GE
10
7
o
, Gate-to-Emitter Voltage (V)
8
T = 25 C
J
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation =
J
sink
9
= 90°C
o
10
V
5µs PULSE WIDTH
CC
11
= 50V
12
W
13
100
14
3