SDT10S60 Infineon Technologies, SDT10S60 Datasheet
SDT10S60
Specifications of SDT10S60
SDT10S60XK
SP000014896
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SDT10S60 Summary of contents
Page 1
... ∫ Page 1 thinQ! SiC Schottky Diode Product Summary V RRM PG-TO220-2-2. Marking Pin 1 Pin 2 D10S60 C Value 10 F 14.1 FRMS 31 FSM 39 FRM 100 FMAX 4 600 RRM 600 RSM 75 tot T -55... +175 j , stg SDT10S60 SDT10S60 V 600 Unit A A² °C 2008-06-02 ...
Page 2
... T =150° Reverse current =600V, T =25° =600V, T =150° Rev. 2.2 Symbol R thJC R thJA = 25 °C, unless otherwise specified j Symbol Page 2 SDT10S60 SDT10S60 Values Unit min. typ. max K Values Unit min. typ. max 1.5 1.7 - 1.7 2.1 µ 350 - 85 1500 ...
Page 3
... F F Switching time =400V, I =10A /dt=200A/µ Total capacitance =0V, T =25°C, f=1MHz =300V, T =25°C, f=1MHz =600V, T =25°C, f=1MHz Rev. 2 °C, unless otherwise specified j Symbol Q c =150° =150° Page 3 SDT10S60 SDT10S60 Values Unit min. typ. max n. 350 - - 2008-06-02 ...
Page 4
... Rev. 2.2 2 Diode forward current = parameter °C 190 Typ. forward power dissipation vs. average forward current P F(AV d=1 d=0,5 d=0,2 40 d=0 2 Page 4 SDT10S60 SDT10S60 ≤ 175 ° 100 120 140 ° =100° F(AV) 2008-06-02 180 20 ...
Page 5
... Rev. 2.2 6 Transient thermal impedance thJC parameter : K 600 Typ. C stored energy µJ 5 4.5 4 3.5 3 2.5 2 1 Page 5 SDT10S60 SDT10S60 ) SDT10S60 single pulse - 100 200 300 400 2008-06- 0.50 0.20 0.10 0.05 0.02 0. 600 V R ...
Page 6
... Typ. capacitive charge vs. current slope / parameter 150 ° *0 100 200 300 400 500 600 700 800 Rev. 2 A/µs 1000 di /dt F Page 6 SDT10S60 SDT10S60 2008-06-02 ...
Page 7
... PG-TO-220-2-2 Rev. 2.2 Page 7 SDT10S60 SDT10S60 2008-06-02 ...
Page 8
... Rev. 2.2 Page 8 SDT10S60 SDT10S60 2008-06-02 ...