1N5818-E3/1 Vishay, 1N5818-E3/1 Datasheet - Page 3

• Manufacturer Part Number: 1N5818-E3/1
• Description: DIODE SCHOTTKY 1A 30V DO41
• Manufacturer: Vishay

Specifications of 1N5818-E3/1

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A
• Max Surge Current: 25 A
• Configuration: Single
• Forward Voltage Drop: 0.875 V at 3.1 A
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Repetitive Reverse Voltage Vrrm Max: 30V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 550mV
• Forward Surge Current Ifsm Max: 25A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 1N5818-E3/1; 1N5818-E3/1GI; 1N5818-E3/1TR; 1N5818-E3/1TR

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88525
Revision: 20-Oct-09
1000
1000
100
100
10
10
0.1
0.1
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Junction Capacitance
Reverse Voltage (V)
Reverse Voltage (V)
1
1
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For technical questions within your region, please contact one of the following:
1N5818 and 1N5819
10
10
V
V
sig
sig
f = 1.0 MHz
f = 1.0 MHz
T
T
J
J
= 50 mV
= 50 mV
= 25 °C
= 25 °C
1N5817
p-p
p-p
100
100
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
DIA.
DO-204AL (DO-41)
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
100
0.1
10
1
0.01
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Fig. 7 - Typical Transient Thermal Impedance
Vishay General Semiconductor
0.1
1N5817 thru 1N5819
t - Pulse Duration (s)
1
10
www.vishay.com
100
3