50WQ06FNTRR Vishay, 50WQ06FNTRR Datasheet - Page 2

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50WQ06FNTRR

Manufacturer Part Number
50WQ06FNTRR
Description
DIODE SCHOTTKY 60V 5.5A D-PAK
Manufacturer
Vishay
Datasheets

Specifications of 50WQ06FNTRR

Voltage - Forward (vf) (max) @ If
570mV @ 5A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
5.5A
Current - Reverse Leakage @ Vr
3mA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Schottky Rectifiers
Peak Reverse Voltage
60 V
Forward Continuous Current
5.5 A
Max Surge Current
320 A
Configuration
Single Dual Anode
Forward Voltage Drop
0.74 V at 10 A
Maximum Reverse Leakage Current
3000 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
50WQ06FNTRR
Manufacturer:
IR
Quantity:
6 000
Document Number: 93360
Voltage Ratings
50WQ06FN
Bulletin PD-20525 rev. G 05/06
Absolute Maximum Ratings
Electrical Specifications
Thermal-Mechanical Specifications
V
V
V
I
V
r
C
L
dv/dt Max. Voltage Rate of Change
I
I
E
I
(1) Pulse Width < 300μs, Duty Cycle < 2%
T
T
R
wt
RM
(*) dPtot
F(AV)
FSM
AR
t
R
RWM
S
FM
F(TO)
AS
T
J
stg
thJC
dTj
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Parameters
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current
* See Fig. 2
Threshold Voltage
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
Max. Average Forward Current
* See Fig. 5
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Parameters
Max. Junction Temperature Range(*)
Max. Storage Temperature Range
Max. Thermal Resistance Junction
to Case
Approximate Weight
Case Style
Device Marking
Parameters
<
Rth( j-a)
1
thermal runaway condition for a diode on its own heatsink
(1)
(1)
50WQ...
50WQ...
-40 to 150
-40 to 150
0.3 (0.01)
50WQ...
10000
0.57
0.74
0.54
0.68
0.35
25.5
320
105
360
5.5
0.8
5.0
35
50WQ06FN
3.0
7
3
D - PAK
Units
Units
Units
g (oz.)
V/μs
°C/W DC operation
mA
mA
mJ
nH
pF
A
A
A
°C
°C
V
V
V
V
V
@
@ 10A
@
@ 10A
T
T
T
V
Measured lead to lead 5mm from package body
(Rated V
Similar to TO-252AA
50% duty cycle @ T
5μs Sine or 3μs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Current decaying linearly to zero in 1 μsec
Frequency limited by T
J
J
J
R
J
= T
= 25 °C, I
= 25 °C
= 125 °C
= 5V
5A
5A
J
max.
DC
R
)
, (test signal range 100Khz to 1Mhz) 25 °C
AS
Conditions
Conditions
Conditions
= 1.2 Amps, L = 10 mH
50WQ06FN
* See Fig. 4
T
T
V
J
J
R
C
= 25 °C
= 125 °C
= rated V
= 132°C, rectangular wave form
60
J
max. V
R
A
= 1.5 x V
Following any rated
load condition and with
rated V
www.vishay.com
RRM
R
typical
applied
2

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