STTH4L06 STMicroelectronics, STTH4L06 Datasheet - Page 4

• Manufacturer Part Number: STTH4L06
• Description: DIODE ULT FAST 600V 4A DO-201AD
• Manufacturer: STMicroelectronics

Specifications of STTH4L06

• Voltage - Forward (vf) (max) @ If: 1.3V @ 3A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A
• Current - Reverse Leakage @ Vr: 3µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

Characteristics
4/8
Figure 7.
Figure 9.
Figure 11. Junction capacitance versus
100
600
550
500
450
400
350
300
250
200
150
100
10
9
8
7
6
5
4
3
2
1
0
10
50
1
0
0
V
1
0
Q (nC)
C(pF)
FP
rr
T
V
Tj=125°C
j
I
R
=150 °C
F
(V)
=400V
=I
20
F(AV)
20
40
Reverse recovery charges versus
dI
Transient peak forward voltage
versus dI
reverse voltage applied
(typical values)
40
F
/dt (typical values)
60
60
10
80
80
dI /dt(A/µs)
dI /dt(A/µs)
F
V (V)
F
F
/dt (typical values)
R
100
100
I
F
I
= 0.5 x I
F
I
F
= 2 x I
120
120
= I
F(AV)
F(AV)
F(AV)
100
140
140
160
160
V
osc
F=1MHz
T
=30mV
j
=25°C
180
180
Doc ID 16276 Rev 1
RMS
1000
200
200
Figure 8.
Figure 10. Forward recovery time versus dI
Figure 12. Thermal resistance junction to
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
450
400
350
300
250
200
150
100
80
70
60
50
40
30
20
10
50
0
0
0.0
25
R
0
t (ns)
th(j-a)
fr
0.5
20
(°C/W)
I
Q
RM
rr
Relative variations of dynamic
parameters versus junction
temperature
(typical values)
ambient versus copper surface
under lead (DO-201AD)
1.0
40
50
1.5
60
Epoxy printed circuit FR4
copper thickness = 35 µm
2.0
80
dI /dt(A/µs)
S
F
CU
T (°C)
j
2.5
75
100
(cm²)
3.0
120
140
3.5
100
Reference: T
V
160
4.0
FR
DO-201AD
=1.1 x V
T
I
STTH4L06
V
F
j
=125°C
I
F
=I
R
=I
=400V
F(AV)
F(AV)
180
4.5
F
j
=150 °C
max.
200
F
125
5.0
/dt