BYW29EX-200,127 NXP Semiconductors, BYW29EX-200,127 Datasheet - Page 5

DIODE RECT 200V 8A SOD113

BYW29EX-200,127

Manufacturer Part Number
BYW29EX-200,127
Description
DIODE RECT 200V 8A SOD113
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYW29EX-200,127

Package / Case
TO-220-2 Full Pack, ITO-220AC
Voltage - Forward (vf) (max) @ If
1.05V @ 8A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Through Hole
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1.3 V at 20 A
Recovery Time
25 ns
Forward Continuous Current
8 A
Max Surge Current
88 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934041280127
BYW29EX-200
BYW29EX-200
Philips Semiconductors
MECHANICAL DATA
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
Rectifier diodes
ultrafast, rugged
Dimensions in mm
Net Mass: 2 g
0.8 max. depth
Recesses (2x)
2.5
not tinned
Fig.12. SOD113; The seating plane is electrically isolated from all terminals.
3 max.
13.5
min.
0.4
M
1
10.3
max
5.08
3.2
3.0
2
2.54
2.8
3
max.
15.8
max.
5
19
seating
plane
0.5
2.5
max
4.6
6.4
0.6
2.5
2.9 max
15.8
max
BYW29EX series
Product specification
Rev 1.200
1.0 (2x)
0.9
0.7

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