BAL99,215 NXP Semiconductors, BAL99,215 Datasheet

DIODE SW HIGH-SPEED SOT-23

BAL99,215

Manufacturer Part Number
BAL99,215
Description
DIODE SW HIGH-SPEED SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAL99,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
70V
Current - Average Rectified (io)
215mA (DC)
Current - Reverse Leakage @ Vr
1µA @ 70V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
1.5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
70 V
Forward Continuous Current
0.215 A
Max Surge Current
4 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
1 uA
Maximum Power Dissipation
250 mW
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933986070215
BAL99 T/R
BAL99 T/R
Product data sheet
Supersedes data of 1999 May 26
dbook, halfpage
DATA SHEET
BAL99
High-speed diode
DISCRETE SEMICONDUCTORS
M3D088
2003 Dec 12

Related parts for BAL99,215

BAL99,215 Summary of contents

Page 1

DATA SHEET dbook, halfpage BAL99 High-speed diode Product data sheet Supersedes data of 1999 May 26 DISCRETE SEMICONDUCTORS M3D088 2003 Dec 12 ...

Page 2

... NXP Semiconductors High-speed diode FEATURES • Small plastic SMD package • High switching speed: max • Continuous reverse voltage: max • Repetitive peak reverse voltage: max • Repetitive peak forward current: max. 500 mA. APPLICATIONS • High-speed switching in e.g. surface mounted circuits. ...

Page 3

... NXP Semiconductors High-speed diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr V forward recovery voltage fr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point th(j-tp) R thermal resistance from junction to ambient ...

Page 4

... NXP Semiconductors High-speed diode GRAPHICAL DATA 300 handbook, halfpage I F (mA) 200 100 0 0 100 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ( − °C prior to surge. Based on square wave currents Fig ...

Page 5

... NXP Semiconductors High-speed diode (nA (1) (2) ( 100 ( maximum values typical values typical values. R Fig.5 Reverse current as a function of junction temperature. 2003 Dec 12 mbh182 handbook, halfpage C d (pF) 200 T (° MHz; T Fig.6 5 0.8 0.6 0.4 0 °C. j Diode capacitance as a function of reverse voltage; typical values. ...

Page 6

... NXP Semiconductors High-speed diode handbook, full pagewidth D.U. Ω ( mA. R Fig.7 Reverse recovery time test circuit and waveforms. I Ω Ω 450 Ω D.U.T. Fig.8 Forward recovery voltage test circuit and waveforms. 2003 Dec 10% SAMPLING OSCILLOSCOPE Ω MGA881 I 90% OSCILLOSCOPE Ω 10% ...

Page 7

... NXP Semiconductors High-speed diode PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2003 Dec scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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