RHRP860 Fairchild Semiconductor, RHRP860 Datasheet
RHRP860
Manufacturer Part Number
RHRP860
Description
DIODE HYPER 600V 8A TO-220AC
Manufacturer
Fairchild Semiconductor
Datasheet
1.RHRP860.pdf
(5 pages)
Specifications of RHRP860
Voltage - Forward (vf) (max) @ If
2.1V @ 8A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
100µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Through Hole
Package / Case
TO-220-2, TO-220AC
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
8A
Forward Voltage Vf Max
2.1V
Reverse Recovery Time Trr Max
35ns
Forward Surge Current Ifsm Max
100A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RHRP860
Manufacturer:
FSC
Quantity:
4 000
Part Number:
RHRP860
Manufacturer:
INTERSIL
Quantity:
20 000
Company:
Part Number:
RHRP860CC
Manufacturer:
Intersil/FSC
Quantity:
12 500
©2002 Fairchild Semiconductor Corporation
8A, 400V - 600V Hyperfast Diodes
The RHRP840 and RHRP860 are hyperfast diodes with soft
recovery characteristics (t
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as
freewheeling/clamping diodes and rectifiers in a variety of
switching power supplies and other power switching
applications. Their low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many
power switching circuits reducing power loss in the switching
transistors.
Formerly developmental type TA49059.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
RHRP840
RHRP860
(T
(Square Wave, 20kHz)
(Halfwave, 1 Phase, 60Hz)
PART NUMBER
C
= 150
o
C)
TO-220AC
TO-220AC
PACKAGE
rr
< 30ns). They have half the
K
A
T
C
Data Sheet
= 25
RHRP840
RHRP860
o
C, Unless Otherwise Specified
BRAND
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
CATHODE
(FLANGE)
January 2002
STG
F(AV)
RWM
RRM
FRM
FSM
AVL
, T
R
D
J
RHRP840, RHRP860
JEDEC TO-220AC
-65 to 175
RHRP840
400
400
400
100
16
75
20
8
-65 to 175
RHRP860
ANODE
RHRP840, RHRP860 Rev. B
600
600
600
100
16
75
20
CATHODE
8
UNITS
mJ
o
W
V
V
V
A
A
A
C
o
C
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RHRP860 Summary of contents
Page 1
... Data Sheet 8A, 400V - 600V Hyperfast Diodes The RHRP840 and RHRP860 are hyperfast diodes with soft recovery characteristics (t < 30ns). They have half the rr recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifi ...
Page 2
... FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE RHRP860 MAX MIN TYP MAX 2 2.1 1 1.7 100 - - - - - 100 500 - - - - - 500 through 25 (See Figure 9 175 C o 100 100 200 300 400 V , REVERSE VOLTAGE (V) R RHRP840, RHRP860 Rev. B UNITS V V µ µ A µ µ C/W 500 600 ...
Page 3
... FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE ©2002 Fairchild Semiconductor Corporation (Continued FIGURE 100 V , REVERSE VOLTAGE ( 100 C, dI /dt = 200A/µ 0 FORWARD CURRENT ( AND t CURVES vs FORWARD CURRENT SQ. WAVE 135 125 145 155 T , CASE TEMPERATURE ( C FIGURE 6. CURRENT DERATING CURVE 150 200 RHRP840, RHRP860 Rev 165 175 o C) ...
Page 4
... AVL R(AVL) R(AVL IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q 1 DUT FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation DUT CURRENT SENSE + FIGURE 11. AVALANCHE CURRENT AND VOLTAGE FIGURE 9. t WAVEFORMS AND DEFINITIONS rr V AVL WAVEFORMS RHRP840, RHRP860 Rev ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...