BAS19 Fairchild Semiconductor, BAS19 Datasheet
BAS19
Manufacturer Part Number
BAS19
Description
DIODE GEN PURP 120V 200MA SOT23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BAS19.pdf
(2 pages)
Specifications of BAS19
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
120V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
100nA @ 100V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
120 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
0.2 A
Max Surge Current
2 A
Reverse Current Ir
0.1 uA
Power Dissipation
0.35 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAS19
Manufacturer:
Fairchild Semiconductor
Quantity:
17 314
Part Number:
BAS19
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
Part Number:
BAS19,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Company:
Part Number:
BAS19-7-F
Manufacturer:
Diodes Inc
Quantity:
36 100
Company:
Part Number:
BAS19215
Manufacturer:
NXP Semiconductors
Quantity:
70 021
Company:
Part Number:
BAS19LT1G
Manufacturer:
ON Semiconductor
Quantity:
59 840
Company:
Part Number:
BAS19LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAS19LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
BAS19W-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
2002 Fairchild Semiconductor Corporation
*
Small Signal Diode
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Absolute Maximum Ratings*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Symbol
Symbol
V
I
I
T
T
V
V
I
C
t
P
R
F(AV)
FSM
R
rr
stg
J
RRM
R
F
T
D
JA
3
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
SOT-23
1
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Parameter
2
Parameter
Parameter
T
A
= 25°C unless otherwise noted
BAS19
T
A
= 25°C unless otherwise noted
1
A8.
I
I
I
V
V
V
I
R
R
F
F
F
R
R
R
L
= 100 mA
= 200 mA
= I
= 100 A
= 100
3
= 100 V
= 100 V, T
= 0, f = 1.0 MHz
Test Conditions
R
= 30 mA, I
2
A
= 150 C
RR
= 3.0 mA,
Connection Diagram
-55 to +150
-55 to +150
Min
120
Value
Value
120
200
350
357
1.0
2.0
1
3
Max
1.25
2NC
100
1.0
0.1
5.0
50
Units
Units
Units
mW
mA
C/W
V
A
A
pF
C
C
ns
V
V
V
BAS19, Rev. A
A
A
Related parts for BAS19
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
BAS19 Summary of contents
Page 1
... Test Conditions I = 100 100 200 100 100 150 1.0 MHz mA 3.0 mA 100 L Connection Diagram 3 1 2NC Value Units 120 V 200 mA 1.0 A 2.0 A -55 to +150 C -55 to +150 C Value Units 350 mW 357 C/W Min Max Units V 120 1.0 V 1.25 V 0.1 A 100 A 5 BAS19, Rev. A ...
Page 2
CROSSVOLT â â â â ...