BAS16-V-GS08 Vishay, BAS16-V-GS08 Datasheet - Page 2

• Manufacturer Part Number: BAS16-V-GS08
• Description: DIODE SS SWITCHING SOT23
• Manufacturer: Vishay
• Series: -r

Specifications of BAS16-V-GS08

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 6ns
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 2 A
• Configuration: Single
• Recovery Time: 6 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Forward Current If(av): 150mA
• Repetitive Reverse Voltage Vrrm Max: 75V
• Forward Voltage Vf Max: 1.25V
• Reverse Recovery Time Trr Max: 6ns
• Forward Surge Current Ifsm Max: 2A
• Operating: RoHS Compliant
• Rohs Compliant: Yes
• Rectifier Type: Small Signal Switching Diode
• Peak Rep Rev Volt: 75V
• Avg. Forward Curr (max): 0.15A
• Rev Curr: 1uA
• Peak Non-repetitive Surge Current (max): 2A
• Forward Voltage: 1.25V
• Operating Temp Range: -55C to 150C
• Package Type: SOT-23
• Rev Recov Time: 6ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BAS16-V
Vishay Semiconductors
Thermal Characteristics
T
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Junction ambient
Junction and storage
temperature range
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
14356
Figure 1. Forward Current vs. Forward Voltage
1000
0.01
100
Parameter
Parameter
0.1
10
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
T
j
= 100 °C
V
F
- Forward Voltage (V)
on ceramic substrate
8 mm x 10 mm x 0.7 mm
I
I
I
I
V
V
V
V
I
V
F
F
F
F
F
25 °C
R
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 10 mA to I
= 75 V
= 75 V, T
= 25 V, T
= 0, f = 1 MHz
= 6 V, R
Test condition
Test condition
L
j
j
= 150 °C
= 150 °C
= 100 Ω
R
= 1 mA,
Symbol
C
V
V
V
V
I
I
I
t
R
R
R
rr
F
F
F
F
D
T
Symbol
j
R
Figure 2. Reverse Current vs. Junction Temperature
14357
= T
thJA
10000
stg
1000
100
10
1
0
Min
V
25
R
= 20 V
T
j
50
– Junction Temperature (°C)
- 55 to + 150
75 100 125 150 175 200
Value
Typ.
357
Document Number 85539
Max
1.25
715
855
50
30
1
1
4
6
Rev. 1.5, 09-Mar-06
K/W
Unit
°C
Unit
mV
mV
µA
µA
µA
pF
ns
V
V