BYV29-500,127 NXP Semiconductors, BYV29-500,127 Datasheet - Page 3

DIODE RECT UFAST 500V TO-220AC

BYV29-500,127

Manufacturer Part Number
BYV29-500,127
Description
DIODE RECT UFAST 500V TO-220AC
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYV29-500,127

Package / Case
TO-220AC-2
Voltage - Forward (vf) (max) @ If
1.25V @ 8A
Voltage - Dc Reverse (vr) (max)
500V
Current - Average Rectified (io)
9A
Current - Reverse Leakage @ Vr
50µA @ 500V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
60ns
Mounting Type
Through Hole
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
500 V
Forward Voltage Drop
1.4 V at 20 A
Recovery Time
60 ns
Forward Continuous Current
9 A
Max Surge Current
110 A
Reverse Current Ir
50 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-3433-5
933662020127
BYV29-500
Philips Semiconductors
September 1998
Rectifier diodes
ultrafast
1000
100
10
Fig.6. Maximum I
1
0.01
Fig.5. Maximum t
0.1
1
10
1
trr / ns
Tj = 25 C
Tj = 100C
1
Irrm / A
Tj = 25 C
Tj = 100C
rrm
dIF/dt (A/us)
-dIF/dt (A/us)
rr
at T
at T
10
10
IF=10A
IF=10 A
j
IF=1A
j
= 25˚C and 100˚C
= 25˚C and 100˚C.
1A
100
100
3
Fig.7. Typical and maximum forward characteristic
Fig.9. Transient thermal impedance Z
0.001
1000
100
0.01
10
30
20
10
1
0.1
0
10
1
1.0
1us
0
Qs / nC
IF / A
Transient thermal impedance, Zth j-mb (K/W)
Fig.8. Maximum Q
Tj=150 C
Tj=25 C
10us
I
F
0.5
= f(V
100us
pulse width, tp (s)
F
typ
); parameter T
-dIF/dt (A/us)
1ms
VF / V
P
10
1
D
IF = 10 A
2 A
10ms 100ms
s
at T
t
p
Product specification
T
BYV29 series
j
= 25˚C
1.5
max
j
D =
BYV29
BYW29
T
t
p
th j-mb
t
1s
Rev 1.300
= f(t
100
10s
2
p
)

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