NSR0240V2T1G ON Semiconductor, NSR0240V2T1G Datasheet - Page 2

• Manufacturer Part Number: NSR0240V2T1G
• Description: DIODE SCHOTTKY 40V 250MA SOD523
• Manufacturer: ON Semiconductor

Specifications of NSR0240V2T1G

• Voltage - Forward (vf) (max) @ If: 700mV @ 200mA
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 10µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3ns
• Capacitance @ Vr, F: 4pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-523
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.25 A
• Max Surge Current: 1 A
• Configuration: Single
• Recovery Time: 3 ns (Typ)
• Forward Voltage Drop: 0.7 V @ 0.2 A
• Maximum Reverse Leakage Current: 10 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NSR0240V2T1GOSTR

1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
Junction and Storage Temperature Range
Reverse Leakage
Forward Voltage
Total Capacitance
Reverse Recovery Time
Oscilloscope
50 W Output
50 W Input
Generator
(V
(V
(V
(I
(I
(I
(V
(I
F
F
F
F
Pulse
R
R
R
R
= 10 mA)
= 100 mA)
= 200 mA)
= I
= 10 V)
= 25 V)
= 40 V)
= 5.0 V, f = 1 MHz)
R
= 10 mA, I
Adjust for I
+
R
DC Current
L
750 mH
Source
= 50 W
0.1 mF
R
RM
1. DC Current Source is adjusted for a Forward Current (I
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
3. Pulse Generator transition time << t
4. I
5. t
= 1.0 mA)
Characteristic
R(REC)
p
» t
A
A
Characteristic
−
= 25°C
= 25°C
rr
I
is measured at 1 mA. Typically 0.1 X I
DUT
Current
Transformer
F
0.1 mF
Figure 1. Recovery Time Equivalent Test Circuit
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
rr
.
2
RM
Symbol
or 0.25 X I
T
R
R
J
Symbol
P
P
, T
qJA
qJA
D
D
V
CT
I
t
stg
R
rr
F
F
) of 10 mA.
I
RM
0 V
I
V
F
RM
R
.
(I
F
Min
= I
t
r
Pulse Generator
at i
RM
−55 to +150
Output Pulse
R(REC)
10%
90%
= 10 mA; measured
Output
RM
Max
600
200
300
400
t
p
t
rr
i
R(REC)
of 10 mA.
= 1 mA)
Typ
345
485
580
0.2
0.5
4.0
3.0
= 1 mA
0.55
Max
390
550
700
2.0
10
°C/W
°C/W
Unit
mW
mW
°C
Unit
mV
mA
pF
ns