RLS245TE-11 Rohm Semiconductor, RLS245TE-11 Datasheet - Page 2

DIODE 220V 200MA LL-34

RLS245TE-11

Manufacturer Part Number
RLS245TE-11
Description
DIODE 220V 200MA LL-34
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of RLS245TE-11

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.5V @ 200mA
Voltage - Dc Reverse (vr) (max)
220V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
10µA @ 220V
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
75ns
Capacitance @ Vr, F
3pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Forward Current If(av)
200mA
Repetitive Reverse Voltage Vrrm Max
250V
Forward Voltage Vf Max
1.5V
Reverse Recovery Time Trr Max
75ns
Forward Surge Current Ifsm Max
625mA
Diode
RoHS Compliant
Product
Switching Diodes
Peak Reverse Voltage
220 V
Forward Continuous Current
200 mA
Max Surge Current
1 A
Configuration
Single
Recovery Time
75 ns
Forward Voltage Drop
1.5 V
Maximum Reverse Leakage Current
10 uA
Operating Temperature Range
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RLS245TE-11TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RLS245TE-11
Manufacturer:
Rohm Semiconductor
Quantity:
62 500
Part Number:
RLS245TE-11
Manufacturer:
RENESA
Quantity:
9 121
Part Number:
RLS245TE-11
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Electrical characteristic curves (Ta=25°C)
1000
1.16
1.15
1.14
1.13
1.12
1.11
100
100
1.1
10
20
15
10
10
1
5
0
1
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE:VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=175℃
VF DISPERSION MAP
IFSM DISRESION MAP
1
AVE:1.121V
Ta=125℃
AVE:4.60A
TIME:t(ms)
t(ms)
Ifsm
Ta=75℃
Ifsm
10
8.3ms
IF=200mA
Ta=25℃
n=30pcs
t
1cyc
Ta=-25℃
Ta=25℃
100
10000000
1000000
100000
10000
1000
1000
200
180
160
140
120
100
100
100
80
60
40
20
50
45
40
35
30
25
20
15
10
10
0.1
10
0
5
0
0.001
1
0
Mounted on epoxy board
IM=1mA
1ms
300us
REVERSE VOLTAGE:VR(V)
50
Rth-t CHARACTERISTICS
VR-IR CHARACTERISTICS
time
trr DISPERSION MAP
IR DISPERSION MAP
0.1
AVE:48.03nA
IF=10mA
100
AVE:31.3ns
TIME:t(s)
150
10
IF=IR=20mA
Ta=175℃
Ta=125℃
VR=220V
Ta=25℃
RL=50Ω
Ta=75℃
Ta=25℃
Ta=-25℃
n=10pcs
Ta=25℃
n=30pcs
Rth(j-l)
Rth(j-c)
Rth(j-a)
200
1000
250
0.1
10
1.5
0.5
10
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
1
2
1
0
1
0
IFSM-CYCLE CHARACTERISTICS
AVE:2.15kV
C=200pF
1
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
R=0Ω
ESD DISPERSION MAP
Ct DISPERSION MAP
NUMBER OF CYCLES
2
AVE:0.942pF
Ifsm
10
Rev.A
3
8.3ms
C=100pF
R=1.5kΩ
AVE:6.43kV
RLS245
1cyc
f=1MHz
Ta=25℃
n=10pcs
f=1MHz
8.3ms
4
VR=0V
100
5
2/2

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