BAL74,215 NXP Semiconductors, BAL74,215 Datasheet - Page 3

• Manufacturer Part Number: BAL74,215
• Description: DIODE HI SPEED SW 50V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAL74,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3424-2; 934002810215; BAL74 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 17
V
V
I
I
I
P
T
T
V
I
C
t
V
R
R
SYMBOL
SYMBOL
SYMBOL
j
F
FRM
FSM
R
rr
stg
j
RRM
R
tot
= 25 °C unless otherwise specified.
F
fr
High-speed diode
d
th(j-tp)
th(j-a)
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current square wave; T
total power dissipation
storage temperature
junction temperature
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
PARAMETER
see Fig.2; note 1
see Fig.4
T
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
R
when switched from I
amb
L
t
t
t
I
I
I
I
V
V
p
p
p
F
F
F
F
= 100 Ω; measured at I
R
R
= 1 µs
= 1 ms
= 1 s
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 °C; note 1
= 50 V
= 50 V; T
note 1
3
R
= 0; see Fig.6
j
j
CONDITIONS
= 150 °C
= 25 °C prior to surge;
CONDITIONS
CONDITIONS
F
F
= 10 mA to I
= 10 mA; t
R
= 1 mA; see Fig.7
r
= 20 ns; see Fig.8 1.75
R
= 10 mA;
−
−
−
−
−
−
−
−
−65
−
MIN. MAX. UNIT
VALUE
Product data sheet
330
500
715
855
1
1.25
0.1
100
2
4
MAX. UNIT
50
50
215
500
4
1
0.5
250
+150
150
BAL74
UNIT
K/W
K/W
mV
mV
V
V
µA
µA
pF
ns
V
V
V
mA
mA
A
A
A
mW
°C
°C