BAS19,235 NXP Semiconductors, BAS19,235 Datasheet - Page 2

• Manufacturer Part Number: BAS19,235
• Description: DIODE GEN-PURP 120V 200MA SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BAS19,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 100V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: General Purpose Diodes
• Peak Reverse Voltage: 120 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1.7 A
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933502020235; BAS19 /T3; BAS19 /T3

NXP Semiconductors
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 100 V; 150 V; 200 V
• Repetitive peak reverse voltage: max. 120 V; 200 V;
• Repetitive peak forward current: max. 625 mA.
APPLICATIONS
• General purpose switching in e.g. surface mounted
DESCRIPTION
The BAS19, BAS20 and BAS21 are general purpose
diodes fabricated in planar technology, and encapsulated
in a small SOT23 plastic SMD package.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
2003 Mar 20
BAS19
BAS20
BAS21
250 V
circuits.
General purpose diodes
∗ = t: Made in Malaysia.
∗ = W: Made in China.
TYPE NUMBER
MARKING CODE
JP∗
JR∗
JS∗
(1)
2
PINNING
handbook, halfpage
PIN
Fig.1 Simplified outline (SOT23) and symbol.
1
2
3
2
anode
not connected
cathode
BAS19; BAS20; BAS21
3
1
DESCRIPTION
n.c.
2
Product data sheet
3
MAM185
1