11DQ10 Vishay, 11DQ10 Datasheet - Page 4

DIODE SCHOTTKY 100V 1.1A DO-41

11DQ10

Manufacturer Part Number
11DQ10
Description
DIODE SCHOTTKY 100V 1.1A DO-41
Manufacturer
Vishay
Datasheet

Specifications of 11DQ10

Voltage - Forward (vf) (max) @ If
850mV @ 1A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
1.1A
Current - Reverse Leakage @ Vr
500µA @ 100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
1.1 A
Max Surge Current
85 A
Configuration
Single
Forward Voltage Drop
0.85 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
*11DQ10
VS-11DQ10
VS-11DQ10
VS11DQ10
VS11DQ10

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Manufacturer
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Price
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Document Number: 93207
11DQ09, 11DQ10
Bulletin PD-2.289 rev. G 11/04
(2) Formula used: T
Pd = Forward Power Loss = I
Pd
150
120
REV
90
60
30
Fig. 4 - Max. Allowable Case Temperature
0
0
= Inverse Power Loss = V
Square wave (D = 0.50)
80% Rated V applied
Average Forward Current - I
see note (2)
Vs. Average Forward Current
0.3
C
= T
R
J
- (Pd + Pd
0.6
F(AV)
REV
R1
0.9
x V
x I
100
DC
) x R
10
Fig. 6 - Max. Non-Repetitive Surge Current
FM
R
Square Wave Pulse Duration - t
(1 - D); I
10
@ (I
thJC
F
1.2
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
(AV)
F(AV)
;
(A)
R
@ V
/
D) (see Fig. 6);
1.5
R1
100
= 80% rated V
RRM
1000
R
p
(microsec)
0.8
0.6
0.4
0.2
10000
0
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
Average Forward Current - I
Fig. 5- Forward Power Loss
0.3
Characteristics
0.6
www.vishay.com
0.9
DC
F
1.2
(AV)
(A)
1.5
4

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