MBR2045CT ON Semiconductor, MBR2045CT Datasheet - Page 6

• Manufacturer Part Number: MBR2045CT
• Description: DIODE SCHOTTKY 45V 10A TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR2045CT

• Voltage - Forward (vf) (max) @ If: 570mV @ 10A
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Other names: MBR2045CTOS

majority carrier conduction, it is not subject to junction di-
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana-
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 12.)
tion will be satisfactory up to several megahertz. For ex-
ample, relative waveform rectification efficiency is ap-
proximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction di-
odes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
Since current flow in a Schottky rectifier is the result of
Rectification efficiency measurements show that opera-
HIGH FREQUENCY OPERATION
Figure 13. Test Circuit for dv/dt and Reverse Surge Current
2.0 ms
1.0 kHz
12 V
100
AMPLITUDE
0-10 AMPS
CURRENT
ADJUST
http://onsemi.com
V
CC
6
2N2222
12 Vdc
1000
CARBON
900
800
700
600
500
400
300
200
100
100
0
0
2N6277
10
Figure 12. Typical Capacitance
+150 V, 10 mAdc
2.0 kW
1.0 CARBON
D.U.T.
1N5817
V
R
, REVERSE VOLTAGE (VOLTS)
20
+
4.0 mF
30
40
T
f = 1 MHz
J
= 25°C
50