BAV23CLT1G ON Semiconductor, BAV23CLT1G Datasheet

DIODE SW CC DUAL 250V SOT23-3

BAV23CLT1G

Manufacturer Part Number
BAV23CLT1G
Description
DIODE SW CC DUAL 250V SOT23-3
Manufacturer
ON Semiconductor
Datasheet
1.BAV23CLT1G.pdf (4 pages)

Specifications of BAV23CLT1G

Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Current - Reverse Leakage @ Vr
100nA @ 200V
Current - Average Rectified (io) (per Diode)
400mA (DC)
Voltage - Dc Reverse (vr) (max)
250V
Reverse Recovery Time (trr)
150ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BAV23CLT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BAV23CLT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
BAV23CLT1G
Quantity:
87 000
BAV23CLT1G
Dual High Voltage Common
Cathode Switching Diode
Features
•
•
•
•
•
•
Typical Applications
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. 0
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Non−Repetitive Peak
Forward Surge Current
Peak Forward Surge Current
Non−Repetitive Peak
ESD Rating
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: Class 2
Fast Switching Speed
Switching Application
This is a Halide−Free Device
This is a Pb−Free Device
LCD TV
Power Supply
Industrial
− Machine Model: Class C
Rating
Per Human Body Model
Per Machine Model
@ t = 100 ms
@ t = 1.0 ms
@ t = 10 ms
I
Symbol
FM(surge)
V
HBM
I
MM
FSM
V
RRM
I
F
R
Value
250
250
400
625
400
9.0
3.0
1.7
4.0
1
mAdc
Unit
mA
kV
V
V
A
V
†For information on tape and reel specifications,
BAV23CLT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
AA
M
G
(Note: Microdot may be in either location)
CATHODE
ORDERING INFORMATION
3
MARKING DIAGRAM
= Specific Device Code
= Date Code
= Pb−Free Package
http://onsemi.com
1
1
(Pb−Free)
Package
SOT−23
CASE 318
STYLE 9
SOT−23
AA MG
2
Publication Order Number:
G
3
3
ANODE
ANODE
3000/Tape & Reel
2
1
2
Shipping
BAV23CLT1/D
†

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BAV23CLT1G Summary of contents

Page 1

... Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BAV23CLT1G SOT−23 3000/Tape & Reel (Pb−Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BAV23CLT1/D † ...

Page 2

THERMAL CHARACTERISTICS Characteristic SINGLE HEATED Total Device Dissipation (Note 25°C A Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Reference, Junction−to−Anode Lead (Note 1) Thermal Reference, Junction−to−Case (Note 1) Total Device Dissipation (Note ...

Page 3

V , FORWARD VOLTAGE (V) F Figure 1. Forward Voltage 3.0 2.5 2.0 1.5 1.0 0 820 W + 100 mH F 0.1 mF D.U.T. ...

Page 4

... SCALE 10:1 0.8 0.031 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 Y14.5M, 1982. FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL ...

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