STPS640CB STMicroelectronics, STPS640CB Datasheet - Page 3

• Manufacturer Part Number: STPS640CB
• Description: DIODE SCHOTTKY 40V 3A DPAK
• Manufacturer: STMicroelectronics

Specifications of STPS640CB

• Voltage - Forward (vf) (max) @ If: 630mV @ 3A
• Current - Reverse Leakage @ Vr: 100µA @ 40V
• Current - Average Rectified (io) (per Diode): 3A
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 3 A
• Max Surge Current: 75 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.84 V @ 6 A
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

STPS640
Figure 1.
Figure 3.
Figure 5.
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
45
40
35
30
25
20
15
10
0.001
5
0
1E-3
0.01
0.1
0.0
1
0.01
I (A)
M
P
P
F(AV)
P
I
M
ARM
ARM p
0.5
(W)
(1µs)
(t )
δ
=0.5
t
0.1
Average forward power
dissipation versus average
forward current (per diode)
δ = 0.05
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration.
(Maximum values, per diode)
(TO-220AB / DPAK)
1.0
1E-2
δ = 0.1
1.5
1
I
F(AV)
t (µs)
p
δ = 0.2
t(s)
2.0
(A)
10
2.5
1E-1
δ = 0.5
3.0
100
δ
=tp/T
δ = 1
3.5
T
T =100°C
T =135°C
T =75°C
C
C
C
tp
1000
1E+0
4.0
Figure 2.
Figure 4.
Figure 6.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
5
0
1E-3
1.2
0.8
0.6
0.4
0.2
1
0
0
I (A)
M
I
25
F(AV)
P
I
M
δ
ARM
P
=tp/T
ARM p
(A)
(25°C)
δ
=0.5
25
(t )
t
T
Average forward current versus
ambient temperature
(
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration.
(Maximum values, per diode)
(TO-220FPAB)
50
δ
tp
= 0.5, per diode)
1E-2
50
R
75
th(j-a)
T
amb
=R
T (°C)
th(j-c)
j
t(s)
75
(°C)
100
1E-1
100
TO-220FPAB
Characteristics
R
th(j-a)
125
=15°C/W
TO-220AB / DPAK
125
T =100°C
T =130°C
T =75°C
C
C
C
150
1E+0
150
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