BAW56T,115 NXP Semiconductors, BAW56T,115 Datasheet - Page 7

DIODE DUAL 90V 150MA H-S SC-75

BAW56T,115

Manufacturer Part Number
BAW56T,115
Description
DIODE DUAL 90V 150MA H-S SC-75
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAW56T,115

Package / Case
EMT3 (SOT-416, SC-75-3)
Voltage - Forward (vf) (max) @ If
1V @ 50mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Current - Average Rectified (io) (per Diode)
150mA (DC)
Voltage - Dc Reverse (vr) (max)
90V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Anode
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
90 V
Forward Continuous Current
0.15 A
Max Surge Current
4 A
Configuration
Dual Common Anode
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.5 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934054726115
BAW56T T/R
BAW56T T/R
NXP Semiconductors
8. Test information
BAV756S_BAW56_SER_5
Product data sheet
Fig 5. Reverse recovery time test circuit and waveforms
Fig 6. Forward recovery voltage test circuit and waveforms
(1) I
R
V = V
S
R
Input signal: reverse pulse rise time t
Oscilloscope: rise time t
Input signal: forward pulse rise time t
S
R
= 50
R
= 50
= 1 mA
I
I
F
R
S
1 k
D.U.T.
450
I
F
r
= 0.35 ns
D.U.T.
OSCILLOSCOPE
R
i
= 50
r
r
OSCILLOSCOPE
= 0.6 ns; reverse voltage pulse duration t
= 20 ns; forward current pulse duration t
mga881
SAMPLING
R
i
Rev. 05 — 26 November 2007
= 50
I
V
R
10 %
t
r
t
10 %
r
90 %
BAV756S; BAW56 series
input signal
90 %
input signal
t
p
t
p
p
p
= 100 ns; duty cycle
100 ns; duty cycle
t
High-speed switching diodes
t
V
I
F
V FR
= 0.05
output signal
0.005
output signal
© NXP B.V. 2007. All rights reserved.
t rr
mga882
(1)
t
t
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