BYV34-500,127 NXP Semiconductors, BYV34-500,127 Datasheet - Page 3

• Manufacturer Part Number: BYV34-500,127
• Description: DIODE RECT DL UF 500V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BYV34-500,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.35V @ 20A
• Current - Reverse Leakage @ Vr: 50µA @ 500V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 500V
• Reverse Recovery Time (trr): 60ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 500 V
• Forward Voltage Drop: 1.35 V
• Recovery Time: 60 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 132 A
• Reverse Current Ir: 50 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3438-5; 933709020127; BYV34-500

Philips Semiconductors
October 1998
Dual rectifier diodes
ultrafast
Fig.5. Maximum t
Fig.7. Typical and maximum forward characteristic
1000
Fig.6. Maximum I
100
10
1
0.01
30
25
20
15
10
0.1
5
0
1
10
0
1
trr / ns
IF / A
Tj = 25 C
Tj = 150 C
Tj = 25 C
Tj = 100 C
1
Irrm / A
0.5
rr
at T
IF= 20 A
rrm
typ
dIF/dt (A/us)
-dIF/dt (A/us)
at T
diode.
j
= 25˚C and 100˚C; per diode
VF / V
BYV34
10
1
10
j
= 25˚C and 100˚C; per
IF=20 A
max
IF=1A
Tj = 25 C
Tj = 100 C
1A
1.5
100
2
100
3
Fig.9. Transient thermal impedance per diode
Fig.8. Maximum Q
0.001
1000
100
0.01
10
1
0.1
10
1
1.0
1us
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
10us
100us
Z
pulse width, tp (s)
th j-mb
-dIF/dt (A/us)
1ms
s
at T
= f(t
P
10
D
IF = 20 A
2 A
10ms 100ms
j
= 25˚C; per diode.
p
)
t
p
Product specification
T
BYV34 series
D =
BYV32E
T
t
p
t
1s
Rev 1.400
100
10s