STPS30L45CR STMicroelectronics, STPS30L45CR Datasheet - Page 4

• Manufacturer Part Number: STPS30L45CR
• Description: DIODE SCHOTTKY DUAL 45V I2PAK
• Manufacturer: STMicroelectronics

Specifications of STPS30L45CR

• Voltage - Forward (vf) (max) @ If: 550mV @ 15A
• Current - Reverse Leakage @ Vr: 400µA @ 45V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-4394-5

Characteristics
4/12
Figure 5.
Figure 7.
Figure 9.
1.0
0.8
0.6
0.4
0.2
0.0
200
180
160
140
120
100
1E-4
5E+2
1E+2
1E+1
1E+0
80
60
40
20
1E-1
1E-2
1E-3
0
Zth(j-c)/Rth(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
I M (A)
Single pulse
I
M
0
IR(mA)
δ
=0.5
t
5
Non repetitive surge peak forward
current versus overload duration
Relative variation of thermal
impedance junction to case versus
pulse duration
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
1E-3
10
1E-2
15
Tj=150°C
Tj=125°C
Tj=100°C
tp(s)
1E-2
Tj=75°C
20
Tj=25°C
t(s)
25
maximum values, per diode
VR(V)
1E-1
30
1E-1
35
δ
=tp/T
Tc=25°C
Tc=125°C
40
Tc=75°C
T
Doc ID 8002 Rev 4
1E+0
tp
1E+0
45
Figure 6.
Figure 8.
Figure 10. Junction capacitance versus
1.0
0.8
0.6
0.4
0.2
0.0
140
120
100
1E-3
2000
1000
80
60
40
20
500
200
100
1E-3
0
Zth(j-c)/Rth(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
I M (A)
Single pulse
1
C(pF)
I
M
δ
=0.5
t
Non repetitive surge peak forward
current versus overload duration
(TO-220FPAB only)
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
reverse voltage applied (typical
values, per diode)
1E-2
2
1E-2
5
tp(s)
1E-1
t(s)
VR(V)
maximum values, per diode
10
1E-1
1E+0
20
STPS30L45C
δ
=tp/T
F=1MHz
Tj=25°C
Tc=125°C
Tc=25°C
Tc=75°C
T
1E+0
tp
1E+1
50