PD57070 STMicroelectronics, PD57070 Datasheet

RF MOSFET Power N-Ch 65 Volt 7.0 Amp

PD57070

Manufacturer Part Number
PD57070
Description
RF MOSFET Power N-Ch 65 Volt 7.0 Amp
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD57070

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
95 W
Maximum Operating Temperature
+ 165 C
Package / Case
PowerSO-10-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
70W(Min)
Power Gain (typ)@vds
14.7dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
2.5(Min)S
Input Capacitance (typ)@vds
91@28VpF
Output Capacitance (typ)@vds
58@28VpF
Reverse Capacitance (typ)
3.8@28VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
50%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
95000mW
Vswr (max)
5(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD57070
Manufacturer:
ST
0
Part Number:
PD57070-E
Manufacturer:
ST
Quantity:
20 000
Part Number:
PD57070S-E
Manufacturer:
ST
0
Part Number:
PD57070S-E
Manufacturer:
ST
Quantity:
20 000
Part Number:
PD57070SE
Manufacturer:
STM
Quantity:
6 207
Part Number:
PD57070STR-E
Manufacturer:
ST
0
Part Number:
PD57070TR-E
Manufacturer:
ST
0
www.st.com/rf/ (look for application note AN1294)
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57070 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57070 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic RF
power
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS (T
THERMAL DATA (T
March, 21 2003
V
Symbol
Mounting recommendations are available in
R
(BR)DSS
OUT
P
T
V
th(j-c)
DISS
STG
I
Tj
GS
D
= 70 W with 14.7 dB gain @ 945 MHz / 28V
package, PowerSO-10RF. PD57070’s
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70°C)
Max. Operating Junction Temperature
Storage Temperature
Junction -Case Thermal Resistance
CASE
=70
°
C)
Parameter
CASE
= 25
°
C)
The LdmoST Plastic FAMILY
RF POWER TRANSISTORS
ORDER CODE
ORDER CODE
PD57070S
PD57070
PowerSO-10RF
PowerSO-10RF
(formed lead)
(straight lead)
-65 to +150
Value
165
1.0
65
95
7
20
PD57070S
PD57070
BRANDING
BRANDING
PD57070S
PD57070
°C/W
Unit
°C
°C
W
V
V
A
1/13

Related parts for PD57070

PD57070 Summary of contents

Page 1

... Field-Effect RF power transistor designed for high gain, broad band commercial and industrial applications. It operates common source mode at frequencies GHz. PD57070 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57070’ ...

Page 2

... PD57070 - PD57070S ELECTRICAL SPECIFICATION (T STATIC Symbol DSS(BR DSS GSS GS( DS(ON ISS OSS RSS GS DYNAMIC Symbol 250 mA out 250 250 250 mA Load DD DQ mismatch ALL PHASE ANGLES PIN CONNECTION GATE SC15200 PD57070S 2/13 ° CASE Test Conditions 100 MHz MHz MHz DS Test Conditions ...

Page 3

... Output Power vs. Input Power 100 Efficiency vs. Output Power Vdd = 28 V Idq = 250 100 PD57070 - PD57070S Vds = Vgs (V) 890 MHz 925 MHz 960 MHz 945 MHz Vdd = 28 V Idq = 250 945, 960 MHz 890 MHz Vdd = 28 V Idq = 250 Pout ( 925 MHz 80 ...

Page 4

... PD57070 - PD57070S TYPICAL PERFORMANCE (PD55070S) Input Return Loss vs. Output Power 0 -5 -10 -15 -20 -25 - Pout (W ) Output Power vs. Bias Current 100 500 1000 1500 Idq (m A) Output Power vs. Supply Voltage 80 70 945 MHz 60 50 890,925 MHz 40 960 MHz Vdd (V) 4/13 Output Power vs. Gate-Source Voltage ...

Page 5

... F, 500 V SURFACE MOUNT CERAMIC CHIP CAPACITOR ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 220 ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR ROGER, ULTRA LAM 2000, THK 0.030” 2.55 2oz SIDES. PD57070 - PD57070S DIMENSION TABLE DIM ...

Page 6

... PD57070 - PD57070S TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 6/13 6.4 inches ...

Page 7

... PD57070 - PD57070S 0.012 2 0.715 0.012 -9 0.741 0.011 -16 0.766 0.011 -23 0.793 0.009 -29 0.822 0.008 -29 0.848 0.007 -34 0.870 0.006 -37 0.889 0.005 -35 0 ...

Page 8

... PD57070 - PD57070S COMMON SOURCE S-PARAMETER (PD55070S 28V FREQ 11 (MHz) 50 0.859 100 0.890 150 0.906 200 0.913 250 0.921 300 0.928 350 0.933 400 0.941 450 0.946 500 0.951 550 0.956 600 0.959 650 0.961 700 0.963 750 0.966 800 0.970 850 0 ...

Page 9

... PD57070 - PD57070S 0.008 5 0.780 0.008 -2 0.795 0.008 -4 0.803 0.007 -13 0.817 0.007 -14 0.831 0.006 -12 0.847 0.005 -14 0.863 0.005 -13 0.876 0.004 -10 0 ...

Page 10

... PD57070 - PD57070S COMMON SOURCE S-PARAMETER (PD55070S 28V FREQ 11 (MHz) 50 0.889 100 0.915 150 0.928 200 0.934 250 0.939 300 0.943 350 0.946 400 0.948 450 0.954 500 0.958 550 0.961 600 0.965 650 0.966 700 0.968 750 0.970 800 0.971 850 0 ...

Page 11

... CRITICAL DIMENSIONS: - Overall width (L) PD57070 - PD57070S Inch MIN. TYP. 0.064 0.065 0.134 0.137 0.046 0.05 0.005 0.007 0.007 0.212 0.217 0.008 0.01 0.370 0.374 ...

Page 12

... PD57070 - PD57070S PowerSO-10RF Formed Lead (Gull Wing) MECHANICAL DATA DIM. MIN 3.4 A3 1 5.4 c 0.23 D 9.4 D1 7.4 E 13.85 E1 9.3 E2 7 deg T1 T2 Note (1): Resin protrusions not included (max value: 0.15 mm per side) 12/13 mm TYP. MAX 0.05 0.1 3.5 3.6 1 ...

Page 13

... Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. http://www.st.com PD57070 - PD57070S 13/13 ...

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