PMBFJ309 T/R NXP Semiconductors, PMBFJ309 T/R Datasheet - Page 5

• Manufacturer Part Number: PMBFJ309 T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ309 T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PMBFJ309,215

Philips Semiconductors
9397 750 13403
Product data sheet
Fig 2. Drain current as a function of gate-source
Fig 4. Common-source output conductance as a
(mA)
I
DSS
( S)
g
150
100
os
50
40
30
20
10
50
0
0
V
cut-off voltage; typical values.
V
function of gate-source cut-off voltage; typical
values.
0
0
DS
DS
= 10 V; T
= 10 V; I
1
1
D
j
= 25 C.
= 10 mA; T
2
2
j
= 25 C.
3
3
PMBFJ308; PMBFJ309; PMBFJ310
V
V
GSoff
GSoff
mcd220
mcd221
(V)
(V)
4
4
Rev. 03 — 23 July 2004
Fig 3. Forward transfer admittance as a function of
Fig 5. Drain-source on-state resistance as a function
R
DSon
( )
(mS)
y
fs
20
16
12
80
60
40
20
8
4
0
0
V
gate-source cut-off voltage; typical values.
V
of gate-source cut-off voltage; typical values.
0
0
DS
DS
= 10 V; I
= 100 mV; V
N-channel silicon field-effect transistors
D
1
2
= 10 mA; T
GS
= 0 V; T
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2
4
j
= 25 C.
j
= 25 C.
3
6
V
V
GSoff
GSoff
mcd219
mcd222
(V)
(V)
4
8
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