BFR92AW /T3 NXP Semiconductors, BFR92AW /T3 Datasheet - Page 7

no-image

BFR92AW /T3

Manufacturer Part Number
BFR92AW /T3
Description
RF Bipolar Small Signal TAPE13 TNS-RFSS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BFR92AW /T3

Dc Current Gain Hfe Max
65
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Frequency
5000 MHz
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
0.025 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Package / Case
UMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR92AW,135
NXP Semiconductors
handbook, full pagewidth
handbook, halfpage
NPN 5 GHz wideband transistor
V
f = 500 MHz; V
CE
(dB)
Fig.10 Minimum noise figure as a function of
= 10 V.
F
6
4
0
2
1
collector current; typical values.
CE
= 10 V; I
C
= 5 mA; Z
180
10
Fig.12 Common emitter noise figure circles; typical values.
o
o
= 50 .
f = 2 GHz
0
1 GHz
500 MHz
I
C
135
135
0.2
0.2
(mA)
o
o
0.2
MGC889
0.5
0.5
10
Rev. 03 - 12 March 2008
2
0.5
90
90
1
1
1
o
o
handbook, halfpage
V
F = 4 dB
F
F = 3 dB
CE
min
(dB)
Fig.11 Minimum noise figure as a function of
= 10 V.
F = 2 dB
2
F
10
= 1.6 dB
6
4
0
2
2
opt
2
2
frequency; typical values.
5
45
45
o
o
5
5
MGC891
0
o
10
3
1.0
0.8
0.6
0.4
0.2
0
1.0
I C = 15 mA
10 mA
5 mA
f (MHz)
Product specification
BFR92AW
MGC890
10
7 of 13
4

Related parts for BFR92AW /T3