BFS25A T/R NXP Semiconductors, BFS25A T/R Datasheet - Page 5

• Manufacturer Part Number: BFS25A T/R
• Description: RF Bipolar Small Signal TAPE-7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFS25A T/R

• Dc Collector/base Gain Hfe Min: 50
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 5000 MHz
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.006 A
• Power Dissipation: 32 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFS25A,115

NXP Semiconductors
In Figs 7 to 9, G
MSG = maximum stable gain; G
gain.
December 1997
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistor
V
I
gain
C
(dB)
CE
gain
(dB)
= 0.5 mA; V
Fig.6 Gain as a function of collector current.
= 1 V; f = 500 MHz; T
25
20
15
10
50
40
30
20
10
5
0
0
0.01
0
Fig.8 Gain as a function of frequency.
CE
UM
= 1 V; T
0.5
= maximum unilateral power gain;
0.1
amb
amb
G UM
MSG
1
= 25 C.
= 25 C.
G UM
MSG
max
1.5
1
= maximum available
f (GHz)
2
I C (mA)
G max
MRC034
MRC035
10
2.5
5
handbook, halfpage
handbook, halfpage
Fig.7
I
f = 1 GHz; T
C
G UM
(dB)
gain
(dB)
= 1 mA; V
50
40
30
20
10
20
16
12
0
10
8
4
0
0
Fig.9 Gain as a function of frequency.
−2
Maximum unilateral power gain as a
function of collector current.
amb
CE
= 1 V; T
= 25 C.
0.5
G UM
MSG
10
amb
−1
= 25 C.
1
1.5
1
V
Product specification
CE
f (GHz)
= 3 V
2
I C (mA)
G max
1 V
BFS25A
MRC033
MRC036
2.5
10