BLS3135-65 TRAY NXP Semiconductors, BLS3135-65 TRAY Datasheet - Page 7

• Manufacturer Part Number: BLS3135-65 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-65 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 200000 mW
• Package / Case: SOT-422
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS3135-65,114

Philips Semiconductors
PACKAGE OUTLINE
1999 Aug 16
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
Microwave power transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
OUTLINE
VERSION
SOT422A
0.225
0.190
5.72
4.83
A
H
U 2
A
0.205
0.195
5.21
4.95
b
A
L
L
0.005
0.003
0.13
0.08
c
IEC
0.391
0.381
9.93
9.68
D
10.29
10.03
0.405
0.395
D 1
JEDEC
0.345
0.335
8.76
8.51
D 1
U 1
D
q
b
E
REFERENCES
0.405
0.395
10.29
10.03
E 1
3
1
2
0
w 2
0.062
0.058
1.58
1.47
F
M
scale
EIAJ
7
5
C
C
19.18
17.65
0.755
0.695
M
H
F
10 mm
B
p
0.178
0.147
4.52
3.74
L
w 1
0.135
0.125
M
3.43
3.18
p
A
M
0.132
0.115
3.35
2.92
B
Q
M
16.51
0.65
PROJECTION
EUROPEAN
q
E 1
22.99
22.73
0.905
0.895
U 1
c
Q
BLS3135-65
Product specification
0.390
0.380
9.91
9.65
U 2
ISSUE DATE
99-03-29
0.25
0.01
w 1
E
SOT422A
0.76
0.03
w 2