NE6500496 CEL, NE6500496 Datasheet
NE6500496
Manufacturer Part Number
NE6500496
Description
RF GaAs L&S Band GaAs MESFET
Manufacturer
CEL
Datasheet
1.NE6500496.pdf
(2 pages)
Specifications of NE6500496
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
1.3 S
Gate-source Breakdown Voltage
- 12 V
Continuous Drain Current
4.5 A
Power Dissipation
25 W
Package / Case
79A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
FEATURES
• HIGH OUTPUT POWER: 4 W
• HIGH LINEAR GAIN: 11.5 dB
• HIGH EFFICIENCY (PAE): 45%
• INDUSTRY STANDARD PACKAGING
RECOMMENDED OPERATING LIMITS
The NE6500496 is a medium power GaAs MESFET designed
for up to a 4 W output stage or as a driver for high power
devices. The device has no internal matching and can be used
from UHF frequencies up to 3.0 GHz. The chips used in this
series offer superior reliability and consistent performance for
which NEC microwave semiconductors are known.
The NE6500496 Transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
DESCRIPTION
SYMBOLS
G
V
T
COMP
R
CH
DS
G
L&S BAND MEDIUM POWER GaAs MESFET
SYMBOLS
P
I
R
I
G
DSS
V
g
OUT
ADD
DS
TH
m
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
P
L
PARAMETERS
Power Out at Fixed Input Power
Linear Gain
Power Added Efficiency
Drain Source Current
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
CHARACTERISTICS
PART NUMBER
UNITS MIN
dB
V
C
TYP MAX
(T
10
C
= 25 C)
130
200
3.0
10
UNITS
dBm
mS
C/W
dB
%
A
A
V
OUTLINE DIMENSIONS
ABSOLUTE MAXIMUM RATINGS
(T
SYMBOLS
C
= 25 C unless otherwise noted)
V
V
V
T
I
T
I
P
GDX
GSX
STG
DSX
GS
DS
CH
0.2 MAX
T
35.5
11.0
MIN
-3.5
1.0
4.0 MIN BOTH LEADS
4.3 0.2
0.1
California Eastern Laboratories
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
1.7 0.15
+.06
NE6500496
-.02
1300
36.0
TYP
11.5
-2.0
0.8
2.3
5.0
45
PARAMETERS
PACKAGE OUTLINE 96
Source
MAX
-0.5
3.5
6.0
11.0 0.15
6.0 0.2
5.2 0.3
15.0 0.3
5.2 0.3
0.6 0.1
(Units in mm)
Drain
Gate
NE6500496
V
1.0 0.1
V
f = 2.3 GHz; R
DS
V
V
DS
DS
UNITS
DS
TEST CONDITIONS
= 10 V; I
mA
= 2.5 V; I
Channel to Case
P
W
= 2.5 V; I
V
V
V
A
= 2.5 V; V
C
C
IN
2.2 0.2
= 26.0 dBm
1.2
-65 to +175
DSQ
RATINGS
4.0 0.1
5.0 MAX
DS
DS
G
GS
175
-18
-12
4.5
= 400 mA
= 15 mA
15
25
25
= 200
= 1 mA
= 0 V
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NE6500496 Summary of contents
Page 1
... HIGH EFFICIENCY (PAE): 45% • INDUSTRY STANDARD PACKAGING DESCRIPTION The NE6500496 is a medium power GaAs MESFET designed for output stage driver for high power devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known ...
Page 2
... MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE (T ...