NE350184C-T1 CEL, NE350184C-T1 Datasheet - Page 4

• Manufacturer Part Number: NE350184C-T1
• Description: RF GaAs Low Noise HJ FET
• Manufacturer: CEL

Specifications of NE350184C-T1

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate-source Breakdown Voltage: - 2 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

S-PARAMETERS
4
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
Data Sheet PG10584EJ01V0S
NE350184C