NESG2101M16 CEL, NESG2101M16 Datasheet

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NESG2101M16

Manufacturer Part Number
NESG2101M16
Description
RF Germanium RO 551-NESG2101M16-A
Manufacturer
CEL
Datasheet

Specifications of NESG2101M16

Mounting Style
SMD/SMT
Power Dissipation
130 mW
Package / Case
M16
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
<R>
Document No. PU10395EJ03V0DS (3rd edition)
Date Published September 2009 NS
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, high-
• Maximum stable power gain: MSG = 17.0 dB TYP. @ V
• High breakdown voltage technology for SiGe Tr. adopted: V
• 6-pin lead-less minimold (M16, 1208 PKG)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG2101M16
NESG2101M16-T3 NESG2101M16-T3-A
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, please contact your nearby sales office.
Note Mounted on 1.08 cm
gain amplification
Part Number
P
NF = 0.6 dB TYP., G
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
O (1 dB)
Unit sample quantity is 50 pcs.
Parameter
= 21 dBm TYP. @ V
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)
NESG2101M16-A
Order Number
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
a
= 19.0 dB TYP. @ V
2
× 1.0 mm (t) glass epoxy PCB
CE
NPN SiGe RF TRANSISTOR FOR
= 3.6 V, I
Symbol
P
NPN SILICON GERMANIUM RF TRANSISTOR
V
V
V
tot
T
CBO
CEO
I
T
EBO
The mark <R> shows major revised points.
stg
C
Note
j
6-pin lead-less minimold
(M16, 1208 PKG)
(Pb-Free)
A
= +25°C)
C (set)
CE
Package
= 10 mA (RF OFF), f = 2 GHz
= 2 V, I
−65 to +150
Ratings
13.0
100
190
150
5.0
1.5
C
CE
= 7 mA, f = 1 GHz
= 3 V, I
CEO
50 pcs
(Non reel)
10 kpcs/reel
(absolute maximum ratings) = 5.0 V
Quantity
C
= 50 mA, f = 2 GHz
NESG2101M16
Unit
mW
mA
°C
°C
V
V
V
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
Supplying Form
2003, 2009

Related parts for NESG2101M16

NESG2101M16 Summary of contents

Page 1

... PKG) ORDERING INFORMATION <R> Part Number Order Number NESG2101M16 NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (T Parameter Collector to Base Voltage Collector to Emitter Voltage ...

Page 2

... OFF dB (set GHz Sopt L Lopt 3 mA GHz Sopt L Lopt μ s, Duty Cycle ≤ 2% Data Sheet PU10395EJ03V0DS NESG2101M16 MIN. TYP. MAX. Unit − − 100 nA − − 100 nA − 130 190 260 − GHz − 11.5 13.5 dB − 0.9 1.2 dB − ...

Page 3

... BE 100 10 0.1 0.01 0.001 0.0001 0.8 0.9 1.0 (V) BE Data Sheet PU10395EJ03V0DS NESG2101M16 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE MHz Collector to Base Voltage V (V) CB COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.4 0.5 0.6 0.7 ...

Page 4

... Remark The graphs indicate nominal characteristics. 4 μ μ 250 A μ 200 A μ 150 A μ 100 A μ ( CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 100 0.1 DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 100 0.1 Data Sheet PU10395EJ03V0DS NESG2101M16 100 Collector Current I (mA 100 Collector Current I (mA) C ...

Page 5

... Collector Current I (mA) C GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current I (mA) C Remark The graphs indicate nominal characteristics. GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 100 1 Collector Current I GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 100 1 Collector Current I Data Sheet PU10395EJ03V0DS NESG2101M16 10 100 (mA 100 (mA ...

Page 6

... Frequency f (GHz) Remark The graphs indicate nominal characteristics. 6 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG 100 0.1 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 100 0.1 Data Sheet PU10395EJ03V0DS NESG2101M16 MAG 2 | 21e 1 10 100 Frequency f (GHz MSG MAG 21e 1 10 100 Frequency f (GHz) ...

Page 7

... C INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 20 MSG MAG 21e Collector Current I (mA) C Remark The graphs indicate nominal characteristics. INSERTION POWER GAIN, MSG vs. COLLECTOR CURRENT GHz 25 MAG 100 1 Collector Current I 100 Data Sheet PU10395EJ03V0DS NESG2101M16 MSG 21e 10 100 (mA ...

Page 8

... INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 MAG 100 1 (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 100 1 (mA) Data Sheet PU10395EJ03V0DS NESG2101M16 = 4 V, MSG 21e 10 100 Collector Current I (mA) C MSG MAG 21e 10 100 Collector Current I (mA) C MSG MAG 21e 10 100 Collector Current I ...

Page 9

... out –5 10 –15 –10 –5 Input Power P , OUTPUT POWER, POWER GAIN, I COLLECTOR EFFICIENCY vs. INPUT POWER 120 3 5.2 GHz 100 –5 15 –10 –5 0 Input Power P Data Sheet PU10395EJ03V0DS NESG2101M16 , C 120 100 η 3 GHz (dBm 120 100 80 P out η (dBm ...

Page 10

... Remark The graphs indicate nominal characteristics. 10 NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 100 1 Collector Current I NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 100 1 Collector Current I NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 100 1 Collector Current I Data Sheet PU10395EJ03V0DS NESG2101M16 GHz 0 10 100 (mA GHz 0 10 100 (mA GHz 0 10 100 (mA) C ...

Page 11

... Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz 0 0 100 1 (mA GHz 0 100 (mA) C Data Sheet PU10395EJ03V0DS NESG2101M16 GHz 0 10 100 Collector Current I (mA ...

Page 12

... PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm) Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical performance and heat sinking. 12 1.0±0.05 +0.07 0.8 –0.05 PIN CONNECTIONS 1. Collector 2. Emitter 3. Emitter 4. Base 5. Emitter 6. Emitter Data Sheet PU10395EJ03V0DS NESG2101M16 ...

Page 13

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NESG2101M16 Please check with an NEC Electronics sales M8E0904E ...

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