PTFB211503EL V1 Infineon Technologies, PTFB211503EL V1 Datasheet - Page 4

• Manufacturer Part Number: PTFB211503EL V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB211503EL V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 1.2 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-33288-6
• Other names: FB211503ELV1NP

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
60
55
50
45
40
35
30
25
20
15
20
19
18
17
16
15
2070
40
Two-tone Broadband Performance
2090
42
V
DD
ƒ
= 30 V, I
1
2110
Gain
Output Power, PEP (dBm)
= 2170 MHz, ƒ
44
V
Efficiency
Two-tone Drive-up
DD
Frequency (MHz)
= 30 V, I
Efficiency
2130
46
DQ
Gain
IMD3
IRL
= 1.20 A, P
(cont.)
2150
48
DQ
2
= 1.20 A,
= 2169 MHz
2170
50
O UT
= 63 W
2190
52
2210
54
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
50
40
30
20
10
4 of 14
-15
-25
-35
-45
-55
-65
-20
-30
-40
-50
-60
-70
40
41
V
DD
= 30 V, I
42
43
2170MHz
2140MHz
2110MHz
ƒ
Selected Frequencies
Output Power, PEP (dBm)
Two-tone Drive-up at
1
44
= 2170 MHz, ƒ
DQ
V
Output Power, PEP (dBm)
45
Two-tone Drive-up
DD
= 1.20 A, tone spacing = 1 MHz
= 30 V, I
Efficiency
46
47
48
DQ
IMD3
2
PTFB211503EL
= 1.20 A,
= 2169 MHz
PTFB211503FL
49
50
Rev. 04, 2011-03-07
51
52
53
54
0
50
40
30
20
10