Z0107NA NXP Semiconductors, Z0107NA Datasheet - Page 7

• Manufacturer Part Number: Z0107NA
• Description: Triacs BULKSL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of Z0107NA

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 8.5 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 7 mA
• Holding Current (ih Max): 10 mA
• Forward Voltage Drop: 1.6 V
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Z0107NA,412

Philips Semiconductors
9397 750 10102
Product data
Fig 10. Normalized critical rate of rise of off-state
a
a
1.6
1.2
0.8
=
0.4
voltage as a function of junction temperature;
typical values.
0
---------------------------------- -
dV
0
dV
D 25 C
D
dt
dt
50
100
T j ( C)
003aaa208
Rev. 02 — 12 September 2002
150
Fig 11. Normalized gate trigger voltage as a function of
a
1.6
1.2
0.8
0.4
junction temperature; typical values.
0
a
-50
=
------------------------ -
V
GT 25 C
V
Z0103/07/09 series
GT
0
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
50
100
T j ( C)
003aaa209
150
Triacs
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