BTA212B-600B /T3 NXP Semiconductors, BTA212B-600B /T3 Datasheet - Page 4
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BTA212B-600B /T3
Manufacturer Part Number
BTA212B-600B /T3
Description
Triacs TAPE13 3Q TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212B-600B_T3.pdf
(6 pages)
Specifications of BTA212B-600B /T3
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
105 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.6 V @ 17 A
Mounting Style
SMD/SMT
Package / Case
SOT-404
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA212B-600B,118
Philips Semiconductors
September 1997
Three quadrant triacs
high commutation
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
2.5
1.5
0.5
3
2
1
0
3
2
1
0
-50
-50
(T
3
2
1
0
IGT(25 C)
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BTA212
TRIAC
TRIAC
Tj / C
Tj / C
Tj / C
50
50
50
100
T2+ G-
T2- G-
100
100
T2+ G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of change of commutating
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
0.001
40
30
20
10
current dI
100
0.01
0
10
0.1
0
10
1
10us
IT / A
20
1
Vo = 1.175 V
Rs = 0.0316 Ohms
Tj = 125 C
dIcom/dt (A/ms)
Zth j-mb (K/W)
Tj = 25 C
0.5
0.1ms
40
com
/dt versus junction temperature.
unidirectional
pulse width t
1ms
1
60
tp / s
BTA212
BT138
VT / V
10ms
Tj / C
BT138
1.5
80
BTA212B series B
typ
P
D
bidirectional
p
.
0.1s
100
Product specification
2
t
p
max
120
2.5
1s
th j-mb
t
Rev 1.200
, versus
10s
140
3