MMT05B350T3 ON Semiconductor, MMT05B350T3 Datasheet - Page 2

Sidacs 50A Surge 350V

MMT05B350T3

Manufacturer Part Number
MMT05B350T3
Description
Sidacs 50A Surge 350V
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMT05B350T3

Mounting Style
SMD/SMT
Package / Case
SMB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMT05B350T3G
Manufacturer:
ON Semiconductor
Quantity:
1 650
Part Number:
MMT05B350T3G
Manufacturer:
ON
Quantity:
30 000
3. Measured under pulse conditions to reduce heating.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Operating Temperature Range Blocking or Conducting State
Overload Junction Temperature − Maximum Conducting State Only
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Breakover Voltage (Both polarities)
Breakover Voltage (Both polarities)
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I
Off State Current (V
Off State Current
On−State Voltage (I
Breakover Current (f = 60 Hz, V
Holding Current (Both polarities)
Critical Rate of Rise of Off−State Voltage
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
(dv/dt = 100 V/ms, I
(+65°C)
(f = 60 Hz, I
R
(+65°C)
(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
Both polarities
V
(Linear waveform, V
Symbol
I
V
V
V
I
I
V
S
D1
BO
H
I
D1
BR
BO
TM
= 1.0 kW, t = 0.5 cycle) (Note 3)
= 500 V; I
, I
, V
D2
D2
(f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
SC
T
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
(Initiating Current) = "1.0 A
= 1.0 A(rms), V
(V
T
D1
D2
SC
(BR)
= 1.0 A)
D
= 50 V) Both polarities
= V
= 1.0 A, Vdc = 1000 V)
= Rated V
= 1.0 mA) Both polarities
DM
Characteristics
) Both polarities
DM
OC
Characteristic
BR
= 1000 V(rms), R
= 1000 V(rms),
, T
J
(T
Voltage Current Characteristic of TSPD
= 25°C)
J
= 25°C unless otherwise noted)
S
(Bidirectional Device)
= 1.0 kW)
(Note 3)
(+65°C)
http://onsemi.com
MMT05B350T3
2
dV
Symbol
V
V
(BO)
V
dv/dt
I
I
I
C
V
(BO)
(BO)
(BR)
BO
I
D1
D2
H
T
O
/dT
Symbol
T
T
J
T
J1
J2
L
I
+ Current
H
2000
Min
150
130
I
V
D1
D1
V
−40 to + 125
TM
I
D2
V
0.12
+ 175
Typ
350
475
270
Max
1.6
260
14
27
D2
V
V
(BR)
(BO)
Max
400
412
400
412
2.0
5.0
3.0
18
30
+ Voltage
I
(BO)
Unit
°C
°C
°C
Unit
V/°C
V/ms
mA
mA
mA
pF
V
V
V
V

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