IRKH500-12 Vishay, IRKH500-12 Datasheet - Page 2

• Manufacturer Part Number: IRKH500-12
• Description: SCR Modules 1200 Volt 500 Amp
• Manufacturer: Vishay

Specifications of IRKH500-12

• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRK.500.. Series
Bulletin I27401 rev. A 09/97
2
On-state Conduction
Switching
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
I
I
I
I
I
I
I
V
V
r
r
V
V
I
I
di/dt
t
t
T(AV)
F(AV)
T(RMS)
TSM
FSM
2
2
H
L
d
t1
t2
q
IRK.500..
t
TM
FM
T(TO)1
T(TO)2
t
Parameter
Parameter
Maximum average on-state current
@ Case temperature
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state or forward
voltage drop
Maximum holding current
Typical latching current
Maximum rate of rise of turned-on
current
Typical delay time
Typical turn-off time
2
2
t for fusing
Voltage
t for fusing
Code
08
12
14
16
V
RRM
/V
peak reverse voltage
DRM
, maximum repetitive
1200
1400
1600
800
V
IRK.500..
IRK.500..
15910
1591
1452
1125
1027
1000
1000
17.8
18.7
15.0
15.7
0.85
0.93
0.36
0.32
1.50
500
785
500
200
2.0
82
KA
Units Conditions
Units Conditions
KA
A/µs
m
mA
KA
°C
µs
µs
A
V
V
A
2
2
s
repetitive peak rev. voltage
s t = 0.1 to 10ms, no voltage reapplied
V
t = 8.3ms
t = 8.3ms
(16.7% x
(I >
180° conduction, half sine wave
180° conduction, half sine wave @ T
t = 10ms
t = 10ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
(16.7% x
(I >
I
T
T
Gate current 1A, di
V
I
V
pk
TM
RSM
J
J
d
R
= 25°C, anode supply 12V resistive load
= T
= 50V, dv/dt = 20V/µs, Gate 0 V 100
= 1500A, T
= 0.67% V
= 750A, T
, maximum non-
x I
x I
J
max., I
T(AV)
T(AV)
1300
1500
1700
900
V
x I
x I
No voltage
reapplied
100% V
reapplied
No voltage
reapplied
100% V
reapplied
), T
), T
J
DRM
T(AV)
T(AV)
J
TM
= T
= 25°C, t
J
J
= T
= T
= 400A, V
, T
J
< I <
< I <
g
max, di/dt = -60A/µs,
RRM
RRM
/dt = 1A/µs
J
J
J
= 25°C
max.
max.
p
Sinusoidal half wave,
Initial T
x I
x I
= 10ms sine pulse
DRM
T(AV)
T(AV)
@ T
I
applied
RRM
www.irf.com
), T
), T
J
= T
J
/I
J
J
= T
DRM
100
= T
= T
mA
C
J
max.
= 82°C
J
J
J
max.
max.
max.
max.