BAT74,215 NXP Semiconductors, BAT74,215 Datasheet - Page 3

• Manufacturer Part Number: BAT74,215
• Description: DIODE SCHOTTKY 30V ISO SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BAT74,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Parallel
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 30V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 2uA
• Peak Non-repetitive Surge Current (max): 0.6A
• Forward Voltage: 0.8V
• Operating Temp Range: -65C to 125C
• Package Type: SOT
• Rev Recov Time: 5ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1616-2; 933742290215; BAT74 T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAT74_3
Product data sheet
Table 6.
[1]
Table 7.
T
[1]
[2]
[3]
Symbol
R
Symbol
Per diode
V
I
C
t
R
rr
amb
F
th(j-a)
d
Refer to SOT143B standard mounting conditions.
Temperature coefficient of forward voltage −0.6 %/K.
Pulse test: t
When switched from I
= 25
°
C unless otherwise specified.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery
time
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
p
= 300 μs; δ = 0.02.
All information provided in this document is subject to legal disclaimers.
F
= 10 mA to I
Rev. 03 — 19 April 2010
V
Conditions
I
I
I
I
I
V
F
F
F
F
F
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
R
= 25 V
= 1 V; f = 1 MHz
= 10 mA; R
Conditions
in free air
L
= 100 Ω; measured at I
Schottky barrier double diode
[1]
[1]
[2]
[3]
Min
-
Min
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
Typ
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
BAT74
Max
500
Max
240
320
400
500
800
2
10
5
Unit
K/W
3 of 10
Unit
mV
mV
mV
mV
mV
μA
pF
ns