MBR20100CT Taiwan Semiconductor, MBR20100CT Datasheet
MBR20100CT
Manufacturer Part Number
MBR20100CT
Description
Schottky (Diodes & Rectifiers) 20 Amp 100 Volt Dual
Manufacturer
Taiwan Semiconductor
Datasheet
1.MBR2060CT.pdf
(2 pages)
Specifications of MBR20100CT
Product
Schottky Rectifiers
Peak Reverse Voltage
100 V
Forward Continuous Current
20 A
Max Surge Current
150 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.85 V at 10 A
Maximum Reverse Leakage Current
100 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
C0
Available stocks
Company
Part Number
Manufacturer
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Price
Company:
Part Number:
MBR20100CT
Manufacturer:
IR
Quantity:
30 000
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MBR20100CT
Manufacturer:
TAIWAN
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4 580
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MBR20100CT
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20 000
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Part Number:
MBR20100CT-E1
Manufacturer:
BCD
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30 000
Part Number:
MBR20100CT-E3/4W
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
MBR20100CT-TU
Manufacturer:
FEIHONG/飞虹
Quantity:
20 000
Company:
Part Number:
MBR20100CTF-E1
Manufacturer:
FAMEG
Quantity:
5 000
Company:
Part Number:
MBR20100CTG
Manufacturer:
ON
Quantity:
15 000
Part Number:
MBR20100CTG
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MBR20100CTK
Manufacturer:
IR
Quantity:
20 000
Features
Mechanical Data
Maximum Ratings and Electrical Characteristics
Rating at 25
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
Peak Repetitive Forward Current (Rated V
Square Wave, 20KHz) at Tc=135
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at
(Note 2)
Maximum Instantaneous Reverse Current
@ Tc=25℃ at Rated DC Blocking Voltage
@ Tc=125℃
Voltage Rate of Change, (Rated V
Typical Junction Capacitance
Typical Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Notes:
Type Number
Pb
C
=135
Pl
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
Cases: JEDEC TO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
astic material used carries Underwriters Laboratory
o
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.
C
o
C/10 seconds,0.25”(6.35mm)from case
RoHS
RoHS
COMPLIANCE
COMPLIANCE
o
IF=10A, TC=25
IF=10A, TC=125
IF=20A, TC=125
IF=20A, TC=25
C ambient temperature unless otherwise specified.
O
O
C
O
O
o
C
C
C
C
R
)
R
,
Symbol
dV/dt
V
V
T
R
I
I
MBR2035CT - MBR20200CT
V
I
I
RRM
FRM
FSM
(AV)
V
RRM
Cj
STG
RMS
T
I
θJC
DC
R
F
J
20.0 AMPS. Schottky Barrier Rectifiers
MBR
2035
CT
35
24
35
0.57
0.84
0.72
400
1.0
—
15
MBR
2045
CT
45
31
45
Dimensions in inches and (millimeters)
1.0
MBR
2050
CT
50
35
50
0.80
0.70
0.95
0.85
10
MBR
2060
-65 to +150
-65 to +175
CT
60
42
60
TO-220AB
10,000
150
0.1
20
20
MBR
2090
CT
90
63
90
0.85
0.75
0.95
0.85
320
0.5
20100
MBR
100
100
CT
70
5.0
2.0
Version: B08
20150
MBR
150
105
150
CT
0.99
0.87
1.23
1.10
20200
MBR
200
140
200
0.15
CT
Units
o
V/uS
C/W
mA
mA
pF
o
o
V
V
V
V
A
A
A
A
C
C
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MBR20100CT Summary of contents
Page 1
RoHS RoHS Pb COMPLIANCE COMPLIANCE Features Pl astic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low ...
Page 2
... Tj=25 C f=1.0MHz Vsig=50mVp-p 10.0 1 0.1 100 0.01 0.1 Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 10 100 NUMBER OF CYCLES AT 60Hz 0 Tj=125 C 0 Tj= Tj=25 C MBR2035CT-MBR2045CT MBR2050CT & MBR20100CT MBR20150CT-MBR20200CT 60 80 100 120 140 1 10 100 T, PULSE DURATION. (sec) Version: B08 ...