CYD18S72V-133BBC Cypress Semiconductor Corp, CYD18S72V-133BBC Datasheet - Page 21
![IC,SYNC SRAM,256KX72,CMOS,BGA,484PIN,PLASTIC](/photos/28/21/282122/484-fbga_sml.jpg)
CYD18S72V-133BBC
Manufacturer Part Number
CYD18S72V-133BBC
Description
IC,SYNC SRAM,256KX72,CMOS,BGA,484PIN,PLASTIC
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CYD09S72V-133BBC.pdf
(26 pages)
Specifications of CYD18S72V-133BBC
Format - Memory
RAM
Memory Type
SRAM - Dual Port, Synchronous
Memory Size
18M (256K x 72)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
0°C ~ 70°C
Package / Case
484-FBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CYD18S72V-133BBC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CYD18S72V-133BBC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Switching Waveforms
Notes
Document Number : 38-06069 Rev. *K
Left_Port (L_Port) Write to Right_Port (R_Port) Read
45. CE
46. This timing is valid when one port is writing, and other port is reading the same location at the same time. If t
47. If t
CLK
L_PORT
ADDRESS
R/W
L_PORT
DATA
CLK
R_PORT
ADDRESS
R/W
R_PORT
DATA
If t
CCS
CCS
0
L
L
R
R
= OE = ADS = CNTEN = BE0 – BE7 = LOW; CE
IN
OUT
< minimum specified value, then R_Port will Read the most recent data (written by L_Port) only (2 * t
> minimum specified value, then R_Port will Read the most recent data (written by L_Port) (t
t
CKHZ
t
CH2
t
t
CH2
CYC2
t
t
CYC2
CL2
t
SW
t
t
SD
SA
t
(continued)
CL2
D
A
n
n
t
HA
t
CCS
t
SA
1
= CNTRST = MRST = CNT/MSK = HIGH.
t
HW
t
HD
A
n
t
HA
[45, 46, 47]
t
CKLZ
t
DC
t
CD2
CYC2
+ t
CYC2
CD2
CCS
Q
n
) after the rising edge of R_Port's clock.
is violated, indeterminate data will be Read out.
+ t
CD2
) after the rising edge of R_Port's clock.
CYD04S72V
CYD09S72V
CYD18S72V
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