ADG419BR-REEL Analog Devices Inc, ADG419BR-REEL Datasheet - Page 4

• Manufacturer Part Number: ADG419BR-REEL
• Description: IC,ANALOG SWITCH,SINGLE,SPDT,CMOS,SOP,8PIN,PLASTIC
• Manufacturer: Analog Devices Inc
• Series: LC²MOSr

Specifications of ADG419BR-REEL

• Rohs Status: RoHS non-compliant
• Function: Switch
• Circuit: 1 x SPDT
• On-state Resistance: 35 Ohm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 5V, 12V
• Current - Supply: 1µA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

ADG419
SINGLE SUPPLY
V
Table 2.
Parameter
ANALOG SWITCH
LEAKAGE CURRENT
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
2
Temperature ranges are as follows: B Version: −40°C to +125°C; T Version: −55°C to +125°C.
Guaranteed by design, not subject to production test.
DD
Analog Signal Range
R
Source OFF Leakage, I
Drain OFF Leakage, I
Channel ON Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
Break-Before-Make Time Delay, t
Off Isolation
Channel-to-Channel Crosstalk
C
C
I
I
DD
L
TRANSITION
ON
S
D
= 12 V ± 10%, V
, C
I
(Off )
INL
S
or I
(On)
INH
1
SS
D
INL
= 0 V, V
INH
D
(Off )
S
, I
(Off )
S
(On)
2
L
= 5 V ± 10%, GND = 0 V, unless otherwise noted.
D
+25°C
40
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
180
60
80
90
13
65
0.0001
1
0.0001
1
−40°C to
+85°C
60
±5
±5
±5
2.4
0.8
±0.005
±0.5
250
2.5
2.5
B Version
−40°C to
+125°C
0 to V
70
±15
±30
±30
2.4
0.8
±0.005
±0.5
250
2.5
2.5
Rev. B | Page 4 of 16
DD
+25°C
40
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
170
60
80
70
13
65
0.0001
1
0.0001
1
T Version
−55°C to
+125°C
0 to V
70
±15
±30
±30
2.4
0.8
±0.005
±0.5
250
2.5
2.5
DD
Unit
V
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns max
ns typ
dB typ
dB typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
Test Conditions/Comments
V
V
V
V
see Figure 12
V
see Figure 12
V
V
R
V
R
V
R
R
f = 1 MHz
f = 1 MHz
V
V
V
L
L
L
L
D
DD
DD
D
D
S
IN
S2
S1
DD
IN
L
= 300 Ω, C
= 300 Ω, C
= 50 Ω, f = 1 MHz; see Figure 16
= 50 Ω, f = 1 MHz; see Figure 17
= 5.5 V
= 12.2 V/1 V, V
= V
= 3 V, 8.5 V, I
= 12.2 V/1 V, V
= V
= 0 V or 5 V
= 8 V/0 V; see Figure 14
= V
= 10.8 V
= 13.2 V
= 13.2 V
D
INL
S2
= 12.2 V/1 V; see Figure 13
= 8 V; see Figure 15
or V
L
INH
L
= 35 pF; V
= 35 pF;
S
= −10 mA
S
S
= 1 V/12.2 V;
= 1 V/12.2 V;
S1
= 0 V/8 V,