IKCS12F60AA Infineon Technologies, IKCS12F60AA Datasheet - Page 14

• Manufacturer Part Number: IKCS12F60AA
• Description: IGBT Modules CiPoS Single In-Line 600V 12A
• Manufacturer: Infineon Technologies

Specifications of IKCS12F60AA

• Collector-emitter Saturation Voltage: 2.1 V
• Power Dissipation: 35 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Package / Case: MSIP-20
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Preliminary Data Sheet
Figure 9. Typical voltage at pin EN as a
Figure 11. Typical diode forward current as
12V
10V
15A
12A
8V
6V
4V
2V
0V
9A
6A
3A
0A
25°C
0V
V
V
dd
GE
=
function of case temperature
a function of forward voltage
=25°C
125°C
150°C
T
V
C
10.3V
15V
20V
50°C
,
F
CASE TEMPERATURE
, forward
1V
VOLTAGE
75°C
2V
100°C
14/17
Figure 10. Typical output characteristic of
Figure 24. Diode transient thermal
10
10
10
15A
12A
-1
-2
9A
6A
3A
0A
0
K/W
K/W
K/W
0V
100ns 1µs
Single Pulse
V
CE
IGBT as a function of collector
emitter voltage (V
impedance as a function of pulse
width
(D=t
,
COLLECTOR EMITTER VOLTAGE
IGBT
Diode
P
V
/T)
1V
t
GE
P
10µs 100µs 1ms 10ms 100ms 1s
,
=25°C
125°C
150°C
PULSE WIDTH
CIPOS™ IKCS12F60AA
2V
DD
Rev. 1.4, Dec. 2007
= 15V)
3V