FF800R17KE3_B2 Infineon Technologies, FF800R17KE3_B2 Datasheet - Page 6

• Manufacturer Part Number: FF800R17KE3_B2
• Description: IGBT Modules N-CH 1.7KV 1.2KA
• Manufacturer: Infineon Technologies

Specifications of FF800R17KE3_B2

• Configuration: Dual Dual Collector Dual Emitter
• Collector- Emitter Voltage Vceo Max: 1700 V
• Continuous Collector Current At 25 C: 1200 A
• Maximum Operating Temperature: + 125 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Package / Case: IHM130
• Ic (max): 800.0 A
• Vce(sat) (typ): 2.0 V
• Technology: IGBT3
• Housing: IHM 130 mm

Technische Information / technical information
IGBT-Module
IGBT-modules
'
'
%USi , V7gW
%USi , V7gW
OD98 , "65 Q6 /01 , M
OD98 , "65 Q6 /01 , M
)
)
uCKb0 , V W
uCKb0 , V W
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'
%USi , V7gW
%USi , V7gW
OD98 , "65 Q6 /01 , M
OD98 , "65 Q6 /01 , M
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)
uCKb0 , V W
uCKb0 , V W
B
B
B
B
400
350
300
250
200
150
100
100
50
10
0
1
0,001
(
(
(
(
0
200 400 600 800 1000 1200 1400 1600
&
&
&
&
H & B
H & B
H & B
H & B
4
4
4
4
%USi6 )*+ , " -.
uCKb0 4
&
&
&
&
0,01
/
/
/
/
FF800R17KE3_B2
7g s;t
4
4
# V
# V
# V
# V
4
4
Ps$F
Ps t
0,1
V
V
V
V
s t
t
"
56
6 "
W
W
W
W
W
W
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56
6
1
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6 M
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#
#
#
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56
6
10
6
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%USi , VODW
%USi , VODW
%USi , VODW
%USi , VODW
7g , 5
7g , 5
7g , 5
7g , 5
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B
B
B
B
350
300
250
200
150
100
50
0
(
(
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0
;6 /01 , M
;6 /01 , M
;6 /01 , M
;6 /01 , M
2
4
4
4
4
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4
/
/
/
/
6
Vorläufige Daten
preliminary data
8
OD sQt
# V
# V
# V
# V
V
V
V
V
10
W
W
W
W
12
W
W
W
W
14
16
18